BD808 NJSEMI | Alldatasheet
Document overview
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Technical content
^s.mi-Conducko'i iPioauati, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor BD808
DESCRIPTION
- DC Current Gain - :hFE=30@lc=-2A
- Collector-Emitter Sustaining Voltage- : VCEo(sus)= -60V(Min)
- Complement to Type BD807
APPLICATIONS
- Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -70 -60 -10 150 -55-150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case UNIT V V V A A W MAX 1.39 UNIT
- c/w - J MB^B| \\S ^^^H 1 — L V PIN I.BASE : j 2. COLLECTOR , _ I 3, EMITTER i 2 3 TO-220C package Mi A » * - B H i-ZT'fl j\\lx t JQQOV
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K f 1 H J C or frD G [*- DIIV A B C D F G H j K L Q R S u V p 50&-' i mm I MIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 044 13.20 1.10 2.70 2.50 1.29 6.45 8.66 UAY 15.90 10.10 4.40 0.90 3.60 5.18 2.90 046 13.40 1.30 2.90 2.70 1.31 6.65 8.86 — J500
- * II *-500 lv, N.I Scnii-CoiKluctDi-s ix-sorvcs tho right to chiinge tost conditions, puramotcr limits and p;ick;ige dimension^ uithout iiuiie*.1. liifbnniitioii tiiniishod hy N.I Scini-l.'undiictors is hclic\\cd to ho hoih nccumrc nnd rcliiihlc ill the lime nl'i-ioin Ounlih/ S
Silicon PNP Power Transistor BD808
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) Vee(on) ICBO IEBO hpE-1 hFE-2 ft PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -200mA ;IB=0 |C=-4A;IB=-0.4A |c= -4A ; VCE= -2V VCB= -70V; IE= 0 VEB= -5V; lc= 0 lc= -2A ; VCE= -2V lc= -4A ; Vce= -2V lc= -1 .OA ; VCE= -1 0V; ftest= 1.0MHz MIN -60 1.5 MAX -1.1 -1.6 -1.0 -2.0 UNIT V V V mA mA MHz