BD807 NJSEMI | Alldatasheet
Document overview
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Technical content
^zmi-Conduckoi LPT.odu.ctz, One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BD807
DESCRIPTION
- DC Current Gain - : hFE=30(Min.)@lc=2A
- Collector-Emitter Sustaining Voltage- : VCEo(sus)= 60V(Min)
- Complement to Type BD808
APPLICATIONS
- Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE 150 -55-150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.39 UNIT 'CM/ IP i ; 1 2 3 L,/ PIN 1.BASE 2. COLLECTOR 3.QV1ITTER TO-220C package '*' A * B - rr-ert M.OOS * H " , t Jl -*{ C C DIM A B C D F G H J K L Q R S U V c so4-< t mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 J506 Sy *• [*- J N.I Semi-Conductors reserves the right to change test conditions, parameter limits ami package dimensions without noiiee. Infoi'mation Curnislied hy Nl Seiiii-Condiictors is believed 10 he huili iiccurate und reliable a! llie time ot'i'.oin;. lo pre->s. llo\\se\\er. M Seiiii-Condiiclurs iissumes no respoiiMbilih lor anv errors or oiiiis>ioiis discovered HI ils n--e. N I Si/mi -( iMidneloi s fi'a'iiriK'.i"' tii'-lomers In \\v that dat;hlleeli are eiiin.-iil he lore plating ordei s
Silicon NPN Power Transistor BD807
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(on) ICBO IEBO hpE-t hFE-2 fi PARAMETER Collector-Emitter Sustaining Voltage-' Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 200mA; IB= 0 lc= 4A; IB= 0.4A lc= 4A; VCE= 2V VCB= 70V; IE= 0 VEB= 5V; lc= 0 lc= 2A ; VCE= 2V lc=4A;VCE=2V lc= 1.0A; VCE= 10V; ftest= 1.0MHz MIN 1.5 MAX 1.1 1.6 1.0 2.0 UNIT V V V mA mA MHz