BD802 NJSEMI | Alldatasheet
Document overview
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Technical content
c$£ml-(londu.ctoi O^ioaucti, Ona.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor BD802
DESCRIPTION
- Collector-Emitter Sustaining Voltage-
- VCEO(SUS) = -1 OOV(Min)
- Low Saturation Voltage
- Complement to Type BD801
APPLICATIONS
- Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation TC=25'C Junction Temperature Storage Ttemperature Range VALUE -100 -100 150 -55-150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case UNIT V V V A A W MAX 1.92 UNIT 'CM/ ., fU^ IW I i ' ! 2 3 PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-220C package - B - rkin 't> K f -»{ C f cl ,-' C ***• D T DIM A B C D F G H K L Q R S U V mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 — JSOO »[* J N.I Seiiii-C'niKliiLtors a-servos the- right lo cliMnge tost conilitions. p;iranictcr limits ;uul pnokujze Jintcnsions without imiict1. liit'omintinn Hirnishal hy N.I Scnii-( 'oiuluctors is hclic\\v;d in he lioih acciinifo IIIK! relmhlc ;il llio link- nt'i'iiiii ID prcsv HiiUL'Nor. M Sciiii-Coiklnctors assumes no respoiiMhilih I'oi iinv orrors or oinis>itnis ilistovcix-il in ils n>c. \\ Si-ini-( iMiJiiLluis aiuuuriiw- cu-.liiMXTs In \\oril\\l J;il;bhi.vK :nv vUiii'ii! hflntv hiciiiL; urilcrs.
Silicon PNP Power Transistor BD802
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL Vceo(sus) VcE(sat) VsE(on) ICBO IEBO hpe-1 hFE-2 ft PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -100mA; IB= 0 lc= -3A; IB= -0.3A lc= -3A ; VCE= -2V VCB=-100V; IE=0 VEB= -5V; lc= 0 lc=-1A;VCE=-2V lc=-3A;VCE=-2V lc= -0.25A ;VCE= -1 OV,ftest= 1 MHz MIN -100 TYP. MAX -1.6 -0.1 UNIT V V V mA mA MHz