BD801 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BD801
DESCRIPTION
- Collector-Emitter Sustaining Voltage- :VCEo(sus)=100V(Min)
- Low Saturation Voltage
- Complement to Type BD802
APPLICATIONS
- Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25t) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation TC=25"C Junction Temperature Storage Ttemperature Range VALUE 100 100 150 -55-150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 1.92 UNIT °c/w w ! ( i 1 2 3 PIN 1.BASE 2. COLLECTOR 3 -BUTTER TO-220C package Mo1 U i : * " A * i -« B «• l/rrfl jvlx t MP.OOV * H ' , ! "T] K T ] s -H c x-l IT Hl« Q I i| G *~ DIM A B C D F G H J K L Q R S U tf I ~nl mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.1S 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 i *\\* N.I Somi-t iHKluttors reserves the right to change tost conditions, parameter limits ami package Jiiticusioiu uithout iiuiioo. Information funii.slial hy N.I Sani-CoiKluctors is helic\\cil to he hoih ncciirato inkl icliahlc at the link- nf i-oiii
Silicon NPN Power Transistor BD801
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(OP) ICBO IEBO hpE-1 hFE-2 fi PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc=100mA;lB=0 lc= 3A; IB= 0.3A lc= 3A ; VCE= 2V VCB= 100V; IE=0 VEB= 5V; lc= 0 lc=1A;VCE=2V lc=3A;VCE=2V lc= 0.25A;VcE= 10V,ftest= 1MHz MIN 100 TYP. MAX 1.6 0.1 UNIT V V V mA mA MHz