BD800 NJSEMI | Alldatasheet
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Technical content
ducti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor BD800
DESCRIPTION
- Collector-Emitter Sustaining Voltage- Low Saturation Voltage Complement to Type BD799
APPLICATIONS
- Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation TC=25'C Junction Temperature Storage Ttemperature Range VALUE -80 -80 150 -55-150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 1.92 UNIT 'CM/ ! 2 3 PIN 1.BASE 1. COLLECTOR 3. EMITTER TO-220C package 1_L A „ B •- J-Pft M.W- r j K T i! -*j < L C i I DIM A B C D F G H J K L Q R S u V x~l L D i mm MIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 r t lv, N.I Soiiii-C'uinJiictors reserves the right to eluinge test eomlitions, parameter limits ;un.l puckiige iliniensions without iiuiiee. lnt(inn;itinii tiirni.sheil by Nl Soiiii-Coiuluctors is helicxoil lo he boili nteiinite nnil rolinhlo ai Ilie lime nt'i.'.iiin in pre-;v llii\\\\e\\er, M Seiiii-CiiiKliietors HVMIIIIOS no respon--ihilil> lor ;ins errors or IHHISMOMS Jiseovereil in its HM;.
Silicon PNP Power Transistor BD800
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeE(on) ICBO IEBO hpE-1 hFE-2 fi PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS Jc= -100mA; IB= 0 IC=-3A;IB=-0.3A lc= -3A ; VCE= -2V VCB= -80V; IE= 0 VEB= -5V; lc= 0 lc=-1A; Vce=-2V lc= -3A ; VCE= -2V lc= -0.25A ;VCE= -1 OV,ftest= 1 MHz MIN -80 TYP. MAX -1.6 -0.1 UNIT V V V mA mA MHz