BD799 NJSEMI | Alldatasheet
Document overview
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Technical content
<^>£mi-(-onauct:o^ z-Pioducti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BD799
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : VCEO(sus)= 80V(Min)
- Low Saturation Voltage
- Complement to Type BD800
APPLICATIONS
- Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation TC=25°C Junction Temperature Storage Ttemperature Range VALUE 150 -55-150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 1.92 UNIT
- c/w J ^^^H 1 — L ^ ' ^ PIN 1.BASE j i i 2. COLLECTOR '; 1^ | 3. EMITTER 1 2 3 TO-220C package *}? A i B H j-ert i K T Jj I C ft: s )*- l J DIM A B C D F G H J K L R S u tf 50*-. I mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 rs — jJOO' » 4 J lv, N.I Scini-CoiRhictors reserves the right It) change test conditions, piiramotcr limits and p;ick:igc dimensions \\vitliout li<|)i\\s->. lln\\vever. M Seini-Coiuliietors iisMiines no responi-ibilil> I'or ;in\\s or imns.Mims iliscovered in its use. \\ Scun •( iMidiieliMs aiO'in;im,"> en--Miners In \\erll\\l ..l.itiiNhecl'- ;uv tiinrii! bel'nre pLieiim orders Oiifilih/ S
Silicon NPN Power Transistor BD799
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VsE(on) ICBO IEBO hpE-1 hpE-2 fi PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc=100mA;lB=0 lc= 3A; IB= 0.3A lc=3A;VCE=2V VCB= 80V; IE= 0 VEB= 5V; lc= 0 lc= 1A; VCE=2V lc=3A; VCE=2V lc= 0.25A;VCE= 10V,ftest= 1MHz MIN TYP. MAX 1.6 0.1 UNIT V V V mA mA MHz