BD798 NJSEMI | Alldatasheet
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Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor BD798
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : VCEo(sus)=-60V(Min)
- Low Saturation Voltage
- Complement to Type BD797
APPLICATIONS
- Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25x;) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation TC-25'C Junction Temperature Storage Ttemperature Range VALUE -60 -60 150 -55-150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case UNIT V V V A A W MAX 1.92 UNIT
- c/w V PIN 1.BASE : I 2. COLLECTOR j 3.B/IITTER 2 3 TO-220C package u r ..*.JJ A - B H ^Tt K T I H c A -*• -U-L i 1 00' G *- DIM A B D F G H I K L Q R S U V t 500'' i mm WIN 15.70 9.90 .20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2 70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 — 15 CO"
- [* J N.I Soiiii-C'tHKliictors ivscrvcs the right to change test conditions, parameter limits ami package dimensions \\vithout nuiiLV. Information fiinii.Nhal hy NI Scmi-( 'oiuluctors is hclic\\cd to he hoih accurate and reliable at the lime ol't'.oin;.
Silicon PNP Power Transistor BD798
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VsE(on) ICBO IEBO hpE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS
- ;lc= -100mA; IB= 0 lc= -3A; IB= -0.3A lc=-3A;VCE=-2V VCB= -60V; IE= 0 VE6= -5V; lc= 0 lc=-1A;VCE=-2V lc= -3A ; VCE= -2V lc= -0.25A ;VCE= -1 OV,ftest= 1 MHz MIN -60 TYP. MAX -1.6 -0.1 UNIT V V V mA mA MHz