BD797 NJSEMI | Alldatasheet
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Technical content
£s,mi-Condu.ckoi ^-Pioduch, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BD797
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : VCEO(sus)=60V(Min.)
- Low Saturation Voltage •
- Complement to Type BD798
APPLICATIONS
- Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation TC=25-C Junction Temperature Storage Ttemperature Range VALUE 150 -55-150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 1.92 UNIT "CM/ /Mfet "2 ' : < PIN 1.BASE 1 • 2. COLLECTOR j 1 3. EMITTER 1 2 3 TO-220C package !}f A » i - B H ^eft <t> * H ', » i c 1 ir. -...! DIM A B C D F G H J K L Q R S u V P i ...» mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 \\i "* " NJ Somi-COiKluetors reserves the right to eh;ui(je losl enmlilions. parameter limits ami puckiige Jiinensions \\ut iiiiliee. liifbnn;ition t'urni.slicil liy N.I Seilii-( 'oiuhiclors is helicwil tt) he holh aecunite :IIK! reliahle ;il the lime of coin;, \\ Sri n i •( i'ii',lii!.-!t>is eiio'iir.i'ie-. cu'-lomei^ to \\i-riiy (hat JalU'heel-, are emu-ill he 11 ire plaein^; orvlers Oiifilih/ S
Silicon NPN Power Transistor BD797
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeE(on) ICBO IEBO hpE-1 hFE-2 fj PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS .•.lc=100mA;lB=0 lc= 3A; IB= 0.3A lc=3A; VCE=2V VCB= 60V; IE= 0 VEB= 5V; lc= 0 lc=1A; VCE=2V lc=3A; VCE=2V lc= 0.25A; VCE= 10V ftest= 1MHz MIN TYP. MAX 1.6 0.1 UNIT V V V mA mA MHz