BD789 NJSEMI | Alldatasheet

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Technical content

tSe.tni-dona.u.cto'i LPioducti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Complementary Plastic Silicon Power Transistors . . . designed for low power audio amplifier and low-current, high speed switching applications.

  • High Collector-Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Win) — BD789, BD790 = 100 Vdc (Min) — BD791, BD792
  • High DC Current Gain @ IQ = 200 mAdc hpE = 40-250
  • Low Collector-Emitter Saturation Voltage — VcE(sat) = O-5 Vdc (Max) @ 'C = 500 mAdc
  • High Current Gain — Bandwidth Product — ft = 40 MHz (Min) @ IQ = 100 mAdc)
  • MAXIMUM RATINGS TELEPHONE: (973) 376-2922 (212) 227-6005 BD789 BD791' PNP BD79O BD792*
  • Motorola Preferred Device Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous — Peak Base Current Total Power Dissipation @ TQ = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEBO ic IB PD Wstg BD789 BD790 BD791 BD792 100 100 6.0 4.0 8.0 1.0 0.12 -65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C

4 AMPERE

80, 100 VOLTS

15 WATTS

Thermal Resistance, Junction to Case Symbol Rejc Max 8.34 Unit °C/W IB Pp. POWER DISSIPATION (WATTS) ** CO ^ o o o ro s x s S V 1.2 0.8 0.4 o a - I o

  • z. 140 160 60 80 100 120 I TEMPERATURE ('C) NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors