BD788 NJSEMI | Alldatasheet
Document overview
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Technical content
ucti, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor BD788
DESCRIPTION
- DC Current Gain- : hFE= 40-250(Min)@ lc= -0.2A •••
- Collector-Emitter Sustaining Voltage - : VCEO(sus)= -60V(Min)
- Complement to type BD787
APPLICATIONS
- Designed for low power audio amplifier and low current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic I CM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE -80 -60 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 8.34 UNIT °c/w
- ^ PIN 1. EMITTER ; 2. COLLECTOR ., i 3. BASE 1 2 2 TO-1 26 package Jr* H - r Q G f — i— *. 2 3 DIM A B C D F H J K R tf O T , — ~"1 t A j: L K ~* mm WIN 10.70 7.70 2.60 0.66 3.10 4,48 2.00 1.35 16.10 3.70 0.40 1.17 MAX 10.90 7.90 2.80 0.36 330 4.63 2.20 1.55 16.30 3.90 0.60 1.37 % i^ r*-J
Silicon PNP Power Transistor BD788
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(satH VoE(sat)-2 VcE(sat)-3 VcEfeatH VBE(sat) VsE(on) ICEX ICEO IEBO hpE-1 hFE-2 hFE-3 hFE-4 fr COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain DC Current Gain Current-Gain — Bandwidth Product Collector Output Capacitance CONDITIONS lc=-10mA; IB= 0 lc= -0.5A; IB= -50mA |C=-1A;IB=-0.1A lc= -2A; IB= -0.2A lc= -4A; IB= -0.8A lc= -2A; IB= 0.2A lc= -2A; VCE= -3V VcB=-80V;VBE(off)=-1.5V VCB= -40V;VBE(°ff)= -1.5V;TC=125°C VCE= -30V; IB= 0 VEB= -6V; lc= 0 lc= -0.2A; VCE= -3V lc=-1A;Vc6=-3V lc= -2A; Vce= -3V lc= -4A; VCE= -3V lc=-0.1A;VcE=-10V lE=0;VCB=-10V;f= 0.1MHz MIN -60 TYP. MAX -0.4 -0.6 -0.8 -2.5 -2.0 -1.8 -1.0 -0.1 -0.1 -1.0 250 UNIT V V V V V V V nA mA mA uA MHz PF