BD786

BD785 NJSEMI | Alldatasheet

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20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN BD785. BD787 PNP BD786, BD788 TELEPHONE: (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 COMPLEMENTARY PLASTIC SILICON ANNULAR* POWER TRANSISTORS . . .designed for low power audio amplifier and low current, high- speed switching applications.

• Low Collector-Emitter Sustaining Voltage - VCEO («ui) 45 Vdc (Win) - BD785, BD786 fj - 60 MHz (Mm) <§> lc - 1 00 mAdc e DC Current Gain Specified at 0.2, 1.0, 2.0 and 4.0 Adc
• Collector Emitter Saturation Voltage Specified at 0.5. 1.0, 2.0 and 4.0 Adc
• MAXIMUM RATINGS

4 AMPERE

45, 6OVOLTS

15 WATTS

Ca!l«IOr-B«u Voltage Emitter -Beie Voltage Collector Currant - Continuous -Peak B*M Currmt Totll Power Diuipation 9 Jc > 25°C Derate Above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO ic IB PO Tj, T,,9 BD785 BD786 BD787 BO788 6.0 4-0 8.0 1.0 0.12 -65 to 4-150 Unit Vdc Vdc Vdc Adc Adc Adc Warn W/°C THERMAL CHARACTERISTICS Character ictie Ttiermal Reiinence, Junction to Caee Symbol H«JC Max 8.34 Unit °C/W TCPO. POWER DISSIPATION WATTS) ^ ?• - -.0 0 Kl 01 t FIGURE 1 - POWER DERATING "N^ x s s S S s TA PO. POWER DISSIPATION WATTS) °_ ~ ^ S M *> H H IN IM IU 1M T. TfHWUTUIII Ml o P } — if^ 1 "S - ^ NOTES 1. DIMENSION Y14.SM, 138; 2. CONTROLLIN DIM I A B D p G H J K M Q R e U I V HSOJMET MIN II 1 10.80_ 1 750 2,42 051 293 2,39 6S( 127 0.39 14E1 1 3-TYP 3 7fi 1,15 0.64 3S» 1.02 ZJ * ~ , G — V — Q g M — IU-n

• D1" if i 0.25 lo.oio)?: iA®|a® NG AND TOLE RANGING P€R ANSI G DIMENSION' INCH JG IAX Mil NCHES « MAX . .~. , . .04 0.«5 0.435 | ""^j rmiTTtn ,74 0.295 0305 : . COLLrCTOrt I.66 0.020 0.026 j .17 0115 0.125 0,094 BSC Ml 0.050 O.OSi i .63 0015 0,025_j i.63 0,575 0655 ! 3"TYP .01 0.148 0.158 39 0.0. 5 0.055 )H 0025 0.03} .93 oi4s ((is TOZJSAA'TYFC — 0.0*0 — i Quality Semi-Conductors

, (J nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 BD785, BD787 NPN BD786, BD788 PNP

• ELECTRICAL CHARACTERISTICS |TC - 2S°C untonothnw.se noted.) Chvecterlnic Symbol [ Min Mn Unit OFF CHARACTERISTICS Col iKtor-E miner Summing Voltage 111 |IC • 10 mAdc, IB - 0) BD78S. BD786 BD787. BD788 Collector Cutoff Current (VcE - JO Vdc, I8 - 01 BO785, BD786 (VcE • 30 Vdc, IB -Ol BO787, BO788 Collector Cutoff Current (VCE - 60 Vdc, VBE(alll BD785, BD786 - 1.5 Vdcl (VCE • 80 Vdc, VBE(o(f) BD787, BD788
• 1,5 Vdcl (VCE -30 Vdc. VBE.0,f) BD78S, BD786 - 1.S Vdc, TC" 12S°C) IVCE - 40 Vdc, VBE(0,,| BD787, BD788 - I.SVdc.Tc- 125°C Emitter Cutoff Current IVEB - 6.0 Vdc. IC = 0) vCEO(wi) >CEO 'CEX 'EBO too 100 1.0 0.1 0.1 Vdc liAdc uAdc mAdc liAdc ON CHARACTERISTICS 111 DC Current Glin |lc * 200 mAdc. VCE - 30 Vdc) |lc • 1,«Adc, VcE - 3.0 Vdcl llc- 2.0Adc, VcE- 3.0 Vdc) llc - 4.0 Adc, VCE - 3.0 Vdcl Collector-Emitter Saturation Voltage llc • 500 mAdc, IB - 50 mAdc) |IC - 1.0 Adc, IB • lOOmAdcl IIC-2.0 Adc, IB -200mA del IIC - 4.0 Adc, IB = BOOmAdcl Base-Emitter Saturation Voltage IIC • 2.0 Adc, IB - 200 mAdc I Biie-Emitter on Voltage (1C;- 2.0 Adc. VCE-3.0Vdc> "FE vCEIsatl vBE(satl vBEIonl 5.0 250 0.4 0.6 o.a 2.5 1.8 Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product IIC- 100 mAdc, VCE" 10 Vdc, f • 10 MHz) Output Capacitance (VcB • 10 Vdc, IC-D) BD785, BD787 f • 0.1 MHzl BD786, 8D788 Small-Signal Current Gain (1C- 200 mAdc, VCE - 10 Vdc, f - 1.0 kHz) Cob hf. MHz pF * Indicate! JEDEC Registered Data. Ill Pull. Ten: PulH Width < 300 IK, Duty Cycle <, 2.0% FIGURE 2 - SWITCHING TIME TEST CIRCUIT

25 Mi ,

• llVf 0-J -9.0V 'r. if £10 ra OUTYCYCLE-l.il* FIGURE 3 - TURN ON TIME fl| HH DC VARIED TO OBTAIN DESIRED CURRENT LEVELS D| MUST BE FAST RECOVERY TYPE, q M1D5300 USED ABOVE Is "'100mA MS06IOO USED BELOW IB > 100 mA FOU mpTCST CIRCUIT. REVERSE ALL POLARITIES SUU 300 ZOO 7.0 s s V
• V !'• ri B (off) S.tt s Vs-; IN x g ic/ C-3 B-l J-! M "

0 V —

-^» s^-. 1C, COLLECTOR CURRENT (ABU