BD776 NJSEMI | Alldatasheet
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, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 BD777* BD776* BD779* BD778* BD780* PLASTIC DARUNGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for genera! purpose amplifier and high-speed switching applications.
- High DC Current Gain hfE - 1400 (Typ) @ IG - 2.0 Adc
- Collector-Emitter Sustaining Voltage - @ 10 mAdc VCEO («"«) - 45 Vde (Mln) — BD77B 60 Vde (Mini — BD777.778 - BO Vde (Mln) — BD779,780
- Reverse Voltage Protection Diode
- Monolithic Construction with Built-in Base-Emitter output Resistor DARLINGTON 4-AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 46. 60. 80 VOLTS IS WATTS MAXIMUM RATINGS nettle Collector-Emitter Volugt Collector-Baal Voltage Emitter- Voltage Colltctor Cumni — Continuous Pmk Bnt Current Tout Device Oivipetian TC — 25"C - Derm ibov* 2S"C Operating and Stor«g> junction Tempereture Ren«. VCEO VCB VEB
- •o TJ.T,,S TJ.T,,, B0776 BO77B B0779 S.O 4.0 6.0 100 0.12 - 65W + 150 Vdc Vde Vde Ade mAdc W/»C THERMAL CHARACTERISTICS ThernulRnitunce. Junction to CMC R0JC Thermal Reiiitmce. junction to Ambient R0JA 8.34 813 "CNt 'CM FIGURE 1 - POWER DERATING l.« s N ioe T. TEMPERATURE Itl IM 0.4 140 o E HJ~ 3Bh- " LC^F ^ -1 . I K U-v .-
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- -4* - Ali - . li : jjijfe. : i : 1 0* ,8,R if I « j,|« 9.11 1 - 1W - PHI. anroi i coufcrai 1 M> TO-22SAATYPE Annular Stmteooduciort Patented by Motorale Inc. Trademerk of Motgrole Inc.
BD777, BD779 NPN BD776, BD778, BD780 PNP ELECTRICAL CHARACTERISTICS (Tc - 25°C unto* Mhi id) CHARACTERISTIC SVMBOL MIN. MAX. UNIT OFF CHARACTERISTICS Collacior-Emittir CoHtctor-Emitttr Suiuinino, Volugi (1) |IO - 10 mAde. IB - 0) BD776 BD777, B0778 B0779. BO780 CollKlor Cutoff Currant
1 VCE = 20 Vde, IB - 01 B0776
(VcE ~ 30 Vdc, IB - 01 BD777, BD778 (VCE " 40 Vdc, Ig - 0» 8D779, BO 780 Collector Cutoff Currant IVCB - Rand, VCEO <»•'. "E • 0, Ic " 100 °C) Emimr Cutoff Currant (VBE-S.OVdt, IC"0) ON CHARACTERISTICS DC Currant G*n llc - 2.0 Ade. VCE - 3.0 vdcl Colltctor-Emimr Saturation Voltagf (lc- 1.5 Adc, le- BmAdc) B«* Emilltr Siturition Voltigi DC - 1.5 Adc. IB - 6 mAdct Bot-Emitttf On Volup (lc - 1 5 Adc. VCE - 3 Vdc) Output Diodt Volugt Drop (IEC "2.0 Ade) DYNAMIC CHARACTERISTICS Currant Gain Bandwidth Product llc - 1.0 Adc. VCE ~ 2.0 Vdc) Turn-On Tim* llc = 260 mA/VCE - 2 V) BO775-777-779 B0776- 778-780 Turn Oft Tim* (lc - 2SO mA. VCE - 2 V) BO77f>777-77» 8O776-778-780 VC60 («•! 'CEO ICBO IEBO 100 100 100 1.0 100 1.0 Vdc MAdc MAde MAdc HFE VCE (Sail VBE (Sat) VBE (On) VEC SVMBOL <on toll 1.5 2.5 2.3 2.0 Tvr. 250 250 ISO 600 400 Vdc Vdc Vdc Vde MHz UNIT nt IM