BD751B NJSEMI | Alldatasheet
Document overview
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Technical content
£s.mi-Conduckoi t-Pioducti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistors BD751B/751C
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 10OV(Min)- BD751B = 130V(Min)-BD751C
- High Power Dissipation
- Complement to Type BD750B/750C
APPLICATIONS
- Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) THERMAL CHARACTERISTICS SYMBOL VCEV VcEO(SUS) VEBO Ic IB PC Tj Tstg PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage BD751B BD751C BD751B BD751C Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@Tc=25"C Junction Temperature Storage Temperature VALUE 110 140 100 130 250 200 -65-200 UNIT V V V A A W SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 0.875 UNIT 'CM/
1 PIN
1.BASE 2. BbllTTER 3. COLLECT OR (CASE) TO-3 package J t r~N~"i ' " I *— u — - K-L-* X^L^^X fc— J-— < VL ^ in DIM MM A 39 g 25.30 <L_ ?ao 0 0.90 E MO G 10 H 5 K 1 HO L 16.75 N 19.40 4 40° u $,op V ' 4.M —, c JI[
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26.67 8,30 1,10 1.60 13.50 17.05 1962 4 3g 3020 4£|J f N.I Seiiti-CciiKluctors reserves the right to change test conditions, parameter limits ami package dimensions uithout iintiee. Intbnnation tiirni.shed by N.I Seiiii-t'oiuluvtors is believed to be both accurate and reliable at the lime of .win itipix's;, llin\\c\\er. \\.l Seiiii-Cnitdiiclors assumes IID re,sponi-ibilil\\r au> t'rrors or oi]iis>i(iiis discovered in ils u-.e. N I So u i •< i Midi ic'ins ciicciira;;es cir-lnu'ers In vi-ril'v lhal dala-heeK are ciiirenl Ivlore placing ni'dei's. Ourilih/ SprTii-f'nntliirJnr^
Silicon NPN Power Transistors BD751B/751C
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) Vee(sat) ICEV IEBO hFE fi PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current BD751B BD751C BD751B BD751C BD751B BD751C BD751B BD751C Emitter Cutoff Current DC Current Gain BD751B BD751C Current-Gain—Bandwidth Product CONDITIONS lc=7.5A; IB=0.75A lc= 5A; IB= 0.5A |c= 7.5A; IB= 0.75A lc= 5A; IB= 0.5A VcEv=110V;VBE(off)=1.5V VCEv=140V;VBE(off)=1.5V VEB= 7V; IG=0 lc= 7.5A ; VCE= 2V lc=5A; VCE=2V lc= 0.5A;VC£= 10V; f,est= 1MHz MIN 100 130 TYP. MAX 1.5 1.0 1.8 1.8 0.5 0.5 1.0 100 UNIT V V V mA mA MHz