BD751 NJSEMI | Alldatasheet
Document overview
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Technical content
<^E.mi-(londiLctoi L/^ioducti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistors BD751/751A
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : VCEO(Sus)=90V(Min)-BD751 = 120V(Min)-BD751A
- High Power Dissipation
- Complement to Type BD750/750A
APPLICATIONS
- Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) THERMAL CHARACTERISTICS SYMBOL VCEV VcEO(SUS) VEBO Ic IB PC Tj Tstg PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage BD751 BD751A BD751 BD751A Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@Tc=25'C Junction Temperature Storage Temperature VALUE 100 130 120 200 200 -65-200 UNIT V V V A A W SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 0.875 UNIT r/w 1 PIN 1.BASE Y^ 2. EMITTER ^ 3. COLLECTOR (CASE)
1 TO-3 package
(-"-I i t I 1 r I : xri^xj / \\— <& c VvJ ^^ 1 llttll DIM MIN MAX A 3900 B 25.30 26.67 C 780 8.30 D 0.90 1 .10 E (.40 1.60 G 10,92 H 546 K 1140 13.50 L 1675 1705 N 19.40 19.62 fl_ 4.00 4,20 U 30.00 3020 V 4,30 4.50
- ES t i B I .Ml Scnii-C'imiluttnrs reserves the right to change lest coiulitions. parameter limits ami package dimensions uithout iiulicc. Information Himi.slteil liy N.I Semi-( 'oitductors is helie\\eil lo he Null accurate anil reliable al the lime ol'i-.oii In press. |lo\\\\c\\er, N.I Seiiii-CuiKliiclors assumes no respon>-ihilil\\r an> t-rrors or oniiSNions Jiscosereil in its use. N I Senn •( iMuliietms eiiciMiiaw^ t-'ii-'lniiieiA in \\eril\\ Jata-lieel-. aiv ami-ill helmv plaeinu onlei-v
Silicon NPN Power Transistors BD751/751A
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VsE(sat) ICEV IEBO hpE fr PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current BD751 BD751A BD751 BD751A BD751 BD751A BD751 BD751A Emitter Cutoff Current DC Current Gain BD751 BD751A Current-Gain — Bandwidth Product CONDITIONS lc= 7.5A; IB= 0.75A lc= 5A; IB= 0.5A lc= 7.5A; IB= 0.75A lc= 5A; IB= 0.5A VCEv=100V;VBE(off)=1.5V VCEv=130V;VBE(off)=1.5V VEB= 7V; IG=0 lc= 7.5A ; VCE= 2V lc= 5A ; VCE= 2V lc=0.5A;VcE=10V;ftest=1MHz MIN 120 TYP. MAX 1.5 1.0 1.8 1.8 0.5 0.5 1.0 100 UNIT V V V mA mA MHz