BD750B NJSEMI | Alldatasheet
Document overview
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Technical content
^zmi-Conduckoi \\Piodu.cki, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistors BD750B/750C
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -1 OOV(Min)- BD751B = -130V(Min)-BD751C
- High Power Dissipation
- Complement to Type BD751B/751C
APPLICATIONS
- Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) THERMAL CHARACTERISTICS SYMBOL VCEV VcEO(SUS) VEBO Ic IB PC Tj Tstg PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage BD750B BD750C BD750B BD750C Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@Tc=25°C Junction Temperature Storage Temperature VALUE -110 -140 -100 -130 -20 250 200 -65-200 UNIT V V V A A W SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 0.875 UNIT
- c/w J ** PIN 1.BASE 3. EMITTER 3. COLLECTOR (CASE) TO-3 package I r L t-E -N-*1 - — ] — IU-D K—U — V_ t*-L-» t V DIM A B c D E __§L. H L H Q u V rtT^N rti ^ ^f -BH t J c JPL r / < ^~ c J Iran MM MAX 3900 2530 780 090 t 40 26.67 8.30 1 10 1.60 10.92 S.4S 11.40 16,75 19.40 4.00 30, Op 430 13.50 17.05 1962 420 3020 4. SO t ; B N.I ScMii-CoiKliicfoi-s reserves the right to change test oiiklitions. p;iriunctcr limits and package ilimensioMs \\\\ithotit iiniiee. Information liimislKxl hy N.I Scini-Conikiutors is believed to he huih accurate and reliable ai the lime ofi/oiii to PIXN-;. However. VI Scmi-Conductors assumes no responi-iliilil\\r an> errors or omissions discovered in its use.
Silicon PNP Power Transistors BD750B/750C
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeE(sat) ICEV IEBO hpE ft PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current BD750B BD750C BD750B BD750C BD750B BD750C BD750B BD750C Emitter Cutoff Current DC Current Gain BD750B BD750C Current-Gain — Bandwidth Product CONDITIONS '1—1 nnmA • ir,— n lc= -7.5A; IB= -0.75A lc= -5A; IB= -0.5A lc= -7.5A; IB= -0.75A lc= -5A; IB= -0.5A VGEv=-110V;VBE(0ff)=-1.5V VcEv=-140V;VBE(off)=-1.5V VEB= -7V; lc=0 lc=-7.5A;VCE=-2V lc= -5A ; VCE= -2V lc= -0.5A ;VCE= -10V; ftest= 1 MHz MIN -100 -130 TYP. MAX -1.5 -1.0 -1.8 -1.8 -0.5 -0.5 -1.0 100 UNIT V V V mA mA MHz