BD750 NJSEMI | Alldatasheet
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Technical content
<^e.ml-(Lond\\jLcto\\ 20 STERN AVE. TELEPHONE: (973) 376-2922 SPRINGFIELD, NEW JERSEY 07081 (21 2) 227-6005 Silicon PNP Power Transistors BD750/750A
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -90V(Min)- BD750 = -120V(Min)-BD750A
- High Power Dissipation
- Complement to Type BD751/751A
APPLICATIONS
- Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCEV VcEO(SUS) VEBO Ic IB PC Tj Tstg PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage BD750 BD750A BD750 BD750A Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@Tc=25°C Junction Temperature Storage Temperature VALUE -100 -130 -90 -120 -20 200 200 -65-200 UNIT V V V A A W r THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 0.875 UNIT 'C/W ^ '• J* I PIN 1.BASE 1 V"^ 2. EMITTER ^ 3. COLLECTOR (CASE) .!_ TO-3 package [*•- N-*j 1
- f i j -JU-OZPL LK j::4|i|t) } j — TX: — i "Idij nun DiM WIN MAX A 39 00 B -"•533 26.67 :' > t'O 3.30
0 O'JO 1 10
E 1.40 \\_ 1.60 "T" " IO'J2 H 54% K, 1 ! .ioTTTsrJ" t 10 no M :0 V <» 30 4 50 NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ Semi-Conductora is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conducton assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Qualify Semi-Conductors
Silicon PNP Power Transistors BD750/750A
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL VCEO<SUS) VcE(sat) VBE(sat) ICEV IEBO hFE fr PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current BD750 BD750A BD750 BD750A BD750 BD750A BD750 BD750A Emitter Cutoff Current DC Current Gain BD750 BD750A Current-Gain — Bandwidth Product CONDITIONS i-— -innmA • i«— n lc= -7.5A; IB= -0.75A lc= -5A; IB= -0.5A lc= -7.5A; IB= -0.75A lc= -5A; IB= -0.5A VcEv=-100V;VBE(afO=-1.5V VcEV=-130V;VBE(off)=-15V VEB= -TV; lc=0 lc=-7.5A;VCE=-2V lc= -5A ; VCE= -2V lc= -0.5A ;Vce= -10V; ftest= 1 MHz MIN -90 -120 TYP. MAX -1.5 -1.0 -1.8 -1.8 -0.5 -0.5 -1.0 100 UNIT V V V mA mA MHz