BD746B

BD746 NJSEMI | Alldatasheet

Document overview

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Technical content

, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 BD746/A/B/C

DESCRIPTION

• Collector Current -lc= -20A
• Collector-Emitter Breakdown Voltage- : V(BR)CEo = -45V(Min)- BD746; -60V(Min)- BD746A -80V(Min)- BD746B; -100V(Min)- BD746C
• Complement to Type BD745/A/B/C

APPLICATIONS

• Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VcER VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Emitter Voltage (RBE= 100n) Collector-Emitter Voltage BD746 BD746A BD746B BD746C BD746 BD746A BD746B BD746C Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ Ta=25'C Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -50 -70 -90 -110 -45 -60 -80 -100 -20 -25 3.5 115 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER MAX Thermal Resistance, Junction to Case 1.1 UNIT °CM/ f I I > I '^, PIN (.BASE 2. COLLECTOR 3. EMITTER TO-3PN package t K Y-» -** — i tr DIM A R C D E F G H J K L N Q K s u Y «- c -— i ' • •) - ' i mm WIN 19.90 15.50 4.70 0.90 1.90 3.40 2.90 3.20 0.595 20.50 1.90 10.89 4,90 3.35 1,995 5.SO MAX 20.10 15.70 4.90 1.10 2.10 3.60 3.10 3.40 0.605 20.70 2.10 10.91 5,10 3,45 2.005 6,1( 1 9.90 1 10.K ~»"° Ourilih/ S

Silicon PNP Power Transistor BD746/A/B/C

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified SYMBOL V(BR)CEO VcE(sat)-1 VcE(sat)-2 VsE(on)-1 VeE(on)-2 ICES ICEO IEBO hpE-1 hpE-2 hFE-3 PARAMETER Collector-Emitter Breakdown Voltage BD746 BD746A BD746B, BD746C Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BD746 BD746A BD746B BD746C BD746/A BD746B/C Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS i_ ^ClmA -1 — fl lc= -5A; IB= -0.5A lc= -20A; IB= -5A lc= -5A; VGE= -4V lc= -20A; VCE= -4V VCE= -50V; VBE= 0 VCE= -50V; VBE= 0; Tc= 125'C VCE= -70V; VBE= 0 VCE= -70V; VBE= 0; Tc= 125'C VCE= -90V; VBE= 0 VCE= -90V; VEE= 0; Tc= 125"C VcE=-110V; VBE=0 VCE= -110V; VBE= 0; Tc= 125"C VCE= -30V; IB= 0 VCE= -60V; IB= 0 VEB= -5V; lc=0 lc= -1A; VCE= -4V lc= -5A; VCE= -4V lc= -20A; VCE= -4V MIN -45 -60 -80 -100 TYP. MAX -1.0 -3.0 -1.0 -3.0 -0.1 -5.0 -0.1 -5.0 -0.1 -5.0 -0.1 -5.0 -0.1 -0.5 150 UNIT V V V V V mA mA mA Switching times td tr ts tf Delay Time Rise Time Storage Time Fall Time lc=-5A;lBi=-lB2=-0.5A; RL=6Q;VBE(off)=4.2V 0.02 0.12 0.60 0.30 u s P S u s 1J S