BD745

BD745 NJSEMI | Alldatasheet

Document overview

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Technical content

^E.mL-Condactoi iPioducti, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD745/A/B/C

DESCRIPTION

• Collector Current -lc= 20A
• Collector-Emitter Breakdown Voltage- : V(BR)CEo = 45V(Min)- BD745; 60V(Min)- BD745A SOV(Min)- BD745B; 100V(Min)- BD745C
• Complement to Type BD746/A/B/C

APPLICATIONS

• Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VcER VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Emitter Voltage (RBE= 100fi) Collector-Emitter Voltage BD745 BD745A BD745B BD745C BD745 BD745A BD745B BD745C Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ Ta-25 L Collector Power Dissipation @ Tc-25 C Junction Temperature Storage Temperature Range VALUE 110 100 3.5 115 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER MAX Thermal Resistance, Junction to Case 1.1 UNIT 'CM/ 2 3 1 -4 PIN 1.BASE 2. COLLECTOR 3.BUIITTER TO-3PN package ,HL.^ fuGif/- A* 'Ei
• H 1 t K V* ^F-~ -S . „ , . ( -3O. • - ; - -*--j
• - -t-R DIM A B C D F F fi H K L N Q R S u mm WIN 19.90 15.50 4.70 0.90 1 90 3.40 2.90 3.20 0.595 20.50 1,90 10.89 4.90 3.35 1.995 5.90 Y 9.90 MAX 20.10 15.70 4.90 1.10 2 10 3,60 3.10 3,40 0.605 20.70 2.10 10.91 5.10 3.45 2.005 6.10 10.10 *• • -^ 0 - *L *-*D *-N —

Silicon NPN Power Transistor BD745/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat)-! VcE(sat)-2 VsE(on)-1 VsE(on)-2 ICES I ceo IEBO hpE-1 hFE-2 hpE-3 PARAMETER Collector-Emitter Breakdown Voltage BD745 BD745A BD745B BD745C Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BD745 BD745A BD745B BD745C BD745/A BD745B/C Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS lc= 5A; IB= 0.5A lc= 20A; IB= 5A lc= 5A; VCE= 4V lc= 20A; VOE= 4V VCE= 50V; VBE= 0 VCE= 50V; VBE= 0; Tc= 125°C VCE= 70V; VBE= 0 VCE= 70V; VBE=0;TC= 125'C VCE= 90V; VBE= 0 VGE= 90V; VBE= 0; Tc= 125'C VCE=110V;VBE=0 VCE= 110V; VBE= 0; Tc= 125'C VCE= 30V; IB= 0 VCE= 60V; IB= 0 VEB= 5V; lc=0 lc=1A;VCE=4V lc= 5A; VCE= 4V lc= 20A; VCE= 4V MIN 100 TYP. MAX 1.0 3.0 1.0 3.0 0.1 5.0 0.1 5.0 0.1 5.0 0.1 5.0 0.1 0.5 150 UNIT V V V V V mA mA mA Switching times td tr ts tf Delay Time Rise Time Storage Time Fall Time lc= 5A; IB1= -IB2= 0.5A; RL= 6 Q ; VBE(off)= -4.2V 0.02 0.35 0.50 0.40 u s u s li S u s