BD744C NJSEMI | Alldatasheet
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Technical content
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor BD744C
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo=-100V(Min)
- Collector Power Dissipation- : Pc= 90W@ lc= 25r
- 1 5A Continuous Collector Current
- Complement to Type BD743C
APPLICATIONS
- Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta-25°C Collector Power Dissipation (oj I c ^o C Junction Temperature , Storage Temperature Range VALUE -110 -100 -15 -20 150 -65-150 THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient UNIT V V V A A A W MAX 1.4 62.5 UNIT "CM/
- c/w ! '. j 1 2 3- PIN 1.BASE 2. COLLECTOR TO-220C package « B » J-^yj. ,-> H4/< K f 1 V c ,*u* rr G [*- DIM fl B C b F H J K L Q R s u V -to. L D mm WIN 1570 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 H »[* J
Silicon PNP Power Transistor BD744C
ELECTRICAL CHARACTERISTICS
TC=251C unless otherwise specified SYMBOL V(BR)CEO VcE(sat)-i VCE(sat)-2 VBEfonH VBE(on)-2 ICBO ICEO IEBO hpE-1 hFE-2 llFE-3 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS lc= -30mA; IB= 0 lc= -5A; IB= -0.5A lc=-15A; IB=-5A lc=-5A;VCE=-4V lc=-15A; VCE=-4V VCB=-110V; IE=0 VCB=-110V; IE=0;TC=125°C VCE= -60V; ls= 0 VEB= -5V; lc= 0 lc=-1A; V0E=-4V lc=-5A;VCE=-4V lc=-15A; VCE=-4V MIN -100 MAX -1.0 -3.0 -1.0 -3.0 -0.1 -5.0 -0.1 -0.5 150 UNIT V V V V V mA mA mA Switching Times td tr ts tf Delay Time Rise Time Storage Time Fall time lc=-5A;lBi=-lB2=-5A; VHi^m- 4 2V RL~ 6 Q tp= 20 us, Duty Cycled 2% 120 600 300 ns ns ns ns