BD744A NJSEMI | Alldatasheet
Document overview
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Technical content
iodu.cti, (I nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor BD744A lv,
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= -60V(Min)
- Collector Power Dissipation- : Pc= 90W@ lc= 25'C
- 15A Continuous Collector Current
- Complement to Type BD743A
APPLICATIONS
- Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tatg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25'C Collector Power Dissipation @ Tc=25r J u n cti on Tern peratu re • Storage Temperature Range VALUE -70 -60 -15 -20 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.4 62.5 UNIT °c/w °c/w J (^••i K ^^^H ' — L ' ;' * PIN 1.BASE I ! 2. COLLECTOR , I 3. EMITTER i 2 3 TO-220C package I 'J? A T J_
- « B H *
- * V H x~P J-CT't MLOCV * H ' ., I j K t c PL G * I J DIW A B C D F G H J K L Q R S U V WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 r -F"
Silicon PNP Power Transistor BD744A
ELECTRICAL CHARACTERISTICS
TC=25"C unless otherwise specified SYMBOL V(BR)CEO VcE(sat)-1 VcE(sat)-2 VeE(on)-1 VeE(on)-2 ICBO ICEO IEBO hpE-1 hFE-2 hFE-3 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage .-. Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS lc= -30mA; IB= 0 lc= -5A; IB= -0.5A lc=-15A; IB=-5A lc= -5A ; VCE= -4V lc=-15A; VCE=-4V VCB= -70V; IE= 0 VCB=-70V; IE=0;TC-125'C VCE= -30V; IB= 0 VEB= -5V; lc= 0 lc=-1A;VCE=-4V lc= -5A ; VOE= -4V lc=-15A; VCE=-4V MIN -60 MAX -1.0 -3.0 -1.0 -3.0 -0.1 -5.0 -0.1 -0.5 150 UNIT V V V V V mA mA mA Switching Times td tr ts tf Delay Time Rise Time Storage Time Fall time lc= -5A; IB1= -Is2= -5A; VBE(off)= 4 2V1 RL~ 6 ft tp=20us,DutyCyclesS 2% 120 600 300 ns ns ns ns