BD743C NJSEMI | Alldatasheet
Document overview
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Technical content
iociucta, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BD743C
DESCRIPTION
- Collector-Emitter Breakdown Voltage- :V(BR)CEo=100V(Min)
- Collector Power Dissipation- : Pc= 90W@ lc= 25'C
- 1 5A Continuous Collector Current
- Complement to Type BD744C
APPLICATIONS
- Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VcBO VCEO VEBO Ic I CM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25°C Collector Power Dissipation @ TC=25°C Junction Temperature • Storage Temperature Range VALUE 110 100 150 -65-150 THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient UNIT V V V A A A W t MAX 1.4 62.5 UNIT "CM/
- c/w 1 2 PIN (.BASE 2, COLLECTOR 3. EMITTER TO-220C package H> B -H !t?f A " * H K T f
- » V \\ ' "G/c ll
- \\< "frjl A DIM A B C D F G H J K L Q R S u V mm M1N 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 f t * r*~ J RK
Silicon NPN Power Transistor BD743C
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat)-i VcE(sat)-2 VeEtonM VaE(on)-2 ICBO ICEO IEBO hpE-1 hpE-2 h|=E-3 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS lc= 30mA; IB= 0 lc= 5A; IB= 0.5A lc= 15A;IB=5A lc= 5A ; VCE= 4V lc=15A;VCE=4V VCB= 110V;IE=0 VCB=110V; IE=0;TC=125"C VCE= 60V; IB= 0 VEB= 5V; lc= 0 !c=1A;VCE=4V lc=5A; VCE=4V lc=15A;VCE=4V MIN 100 MAX 1.0 3.0 1.0 3.0 0.1 5.0 0.1 0.5 150 UNIT V V V V V mA mA mA Switching Times td tr ts tf Delay Time Rise Time Storage Time Fall time 350 500 400 ns ns ns ns