BD743B NJSEMI | Alldatasheet
Document overview
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Technical content
<^>£.m.L-Condu<ikoi LPioducti, (Jna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BD743B
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= SOV(Min)
- Collector Power Dissipation- : Pc= 90W@ lc= 25'C
- 1 5A Continuous Collector Current
- Complement to Type BD744B
APPLICATIONS
- Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic I CM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @T -25T Collector Power Dissipation I c-^O L Junction Temperature , Storage Temperature Range VALUE 150 -65-150 THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient UNIT V V V A A A W r MAX 1.4 62.5 UNIT 'CM/
- CM/
- ^^* 3 . . PIN 1.BASE , i ' 2. COLLECTOR | 3. EMITTER 1 2 2- TO-220C package MQ A f ij - e -t -* v H s~\\ b JftW5- * H , r~ i K T ; -H c i I *'° G - DIM A B C D F G H J K L Q R S h V mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 R JC 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 665 8.86 r — T50&
Silicon NPN Power Transistor BD743B
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL V(BR)CEO VcEtsatM VcE(sat)-2 VsE(on)-1 VeE(on)-2 ICBO ICEO IEBO hpE-1 hpE-2 hpE-3 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage . Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS lc= 30mA; IB= 0 lc= 5A; IB= 0.5A lc= 15A;IB=5A lc=5A; VCE=4V lc=15A;VCE=4V VCB= 90V; IE= 0 VCB=90V;lE=0;Tc=125-C VCE= 60V; IB= 0 VEB= 5V; lc= 0 |c= 1A; VCE^V lc=5A;VcE=4V lc=15A;VCE=4V MIN MAX 1.0 3.0 1.0 3.0 0.1 5.0 0.1 0.5 150 UNIT V V V V V mA mA mA Switching Times td tr ts tf Delay Time Rise Time Storage Time Fall time i *;A- i i n £A- 350 500 400 ns ns ns ns