BD743 NJSEMI | Alldatasheet
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Technical content
Jb£,mi'Conduckoi ^Product*, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 BD743
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= 45V(Min)
- Collector Power Dissipation- : Pc= 90W@ lc= 25°C
- 15A Continuous Collector Current
- Complement to Type BD744
APPLICATIONS
- Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25t:) SYMBOL VCBO VCEO VEBO lo ICM Is PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25'C Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.4 62.5 UNIT
- c/w °c/w \\ PIN i ' i 1 2 2- 1. BASE 2. COLLECTOR 3.BV1ITTER TO-220C package MQ A t L - B H — -V -•) x-' :rCf c 't'- K n t ij c i ,oa " U DIM A B C D F G J K L Q R S u V mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86
- •-S — |S C*' N.I Sonii-C i.iidiiciors .vscrvos the right to chiiiiye test CDiulitions. parainotcr limits ami pjicknge diincnsinns uithout h.pixNs ||n«c\\or. M SLMiii-Coikliictors;issiiniosiiorc.sponsihilil> lor ;IM> cm.rs or
Silicon NPN Power Transistor BD743
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BR)CEO VcE(sat)-1 VcE(sat)-2 VBE(on)-i VBE(on)-2 ICBO ICEO IEBO hpE-1 hFE-2 hFE-3 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage ... Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS lc= 30mA; IB= 0 lc= 5A; IB= 0.5A IC=15A;IB=5A lc=5A;VCE=4V lc=15A;VCE=4V VCB= 50V; IE= 0 VCB=50V;lE=0;Tc=125"C VCE= 30V; IB= 0 VEB= 5V; lc= 0 lc=1A;VcE=4V lc= 5A ; VCE= 4V lc=15A;VCE=4V MIN MAX 1.0 3.0 1.0 3.0 0.1 5.0 0.1 0.5 150 UNIT V V V V V mA mA mA Switching Times td tr ts tf Delay Time Rise Time Storage Time Fall time 350 500 400 ns ns ns ns