BD738 NJSEMI | Alldatasheet
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Technical content
<^E.ml-Conduckoi ^P , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 BD738
DESCRIPTION
- DC Current Gain - : hFE = 40(Min.)@ lc= -20mA
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= -45V(Min.)
- Complement to Type BD737
APPLICATIONS
- Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25'C Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -45 -45 150 -55-150 UNIT V V V A A A W r /•»»(. £, \\ pX ^^^H '' — L ;' PIN 1.BASE j . 2, COLLECTOR I 2 :-. TO-220C package Ul i l A r *
- * B M =Kyt[ mocs . ...j i K T 1 c i T P DIIV A B C D F G H J K L Q R S u V 5C&'' i mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 r — i5?*' » \\-t... j N.I Scmi-e"niuliictiirs ix-s^rvos the right to change tost conditions, parameter limits ami pnckiige Jiincn.sions nithout \\ Si-mi •( iMidiiclois cni:tiiira.i.;c-> cii-.lnincis lo s^ril'v thai ^la(a^lleeI^ arc cninjil hd'oie placini; orilei's.
Silicon PNP Power Transistor BD738
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VeE(on) ICES hpE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc= -30mA; IB= 0 lc=-0.1mA;lE=0 lE=-1mA; lc=0 lc= -2A; IB= -0.2A lo=-2A;VcE=-1V VCE= -45V; VBE= 0 lc= -20mA; Vce= -4V lc=-2A;VCE=-1V MIN -45 -45 MAX -0.6 -1.1 -0.2 UNIT V V V V V mA