BD726 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD726
DESCRIPTION
- DC Current Gain- : hFE= 40@ lc= -0.5A
- Collector-Emitter Breakdown Voltage - :V(BR)cEo=-120V(Min)
- Complement to type BD725
APPLICATIONS
- Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25x:) SYMBOL VcBO VCEO VEBO Ic I CM IB PC Tj Tsia PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE -120 -120 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance.Junction to Ambient MAX 3.5 100 UNIT
- c/w °c/w
- ^ PIN 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 TO-126 package """^ir r - 1 i »_- D-» — » n i i r'T~~ G |*- i » •] 2 3 DIM A B C D F G H J K R V -*|( f • A K mm WIN 10.70 7.70 2,60 0.66 3.10 4,48 2.00 1.55 16.10 3.70 0.40 1.17 MAX 10.90 7.90 2.30 0.86 3.30 4.63 2.20 1.55 16.30 3,90 0.60 1.37 :K~ L *-R N.I Soiiii-CoiKliictors ivscrvos the right to change test conditions, parameter limits ami package JimeiiMons uithout niiiiee. Information rimii.slicil by N.I Seini-Coiuluetors is believed lo he hoih accurate and reliable at the time nl'i-oin lo pixss. llmvever. M Seini-Condiictors assumes no responsibililv lor an> ermrs or omission-, discovered in its !i-,c.
Silicon PNP Power Transistor BD726
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VeE(on) ICBO ICEO IEBO hpe-1 hpE-2 fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -30mA ; le= 0 lc= -2A; IB= -0.2A lc= -2A; VCE= -4V VCB=-120V;IE=0 VCB=-60V;lE=0;Tc=150'C VCE= -60V; ls= 0 VEB= -5V; lc= 0 lc= -0.5A; VCE= -4V lc= -2A; VCE= -4V lc= -0.5A; VCE= -4V MIN -120 TYP. MAX -1.0 -1.4 -50 -0.1 -0.2 UNIT V V V uA mA mA mA MHz Switching Times ton toff Turn-On time Turn-Off time IC=-1A;IB1=-IB2=-0.1A; Vcc= -20V 0.1 0.4 u s u S