BD725 NJSEMI | Alldatasheet
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Technical content
J^Eini-CondiLckoi Lptoducti, (Jna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 BD725
DESCRIPTION
- DC Current Gain- : hFE= 40@ lc= 0.5A
- Collector-Emitter Breakdown Voltage - : V(BR)CEO= 120V(Min)
- Complement to type BD726 APPLICATICNS
- Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE 120 120 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance.Junction to Case Thermal Resistance.Junction to Ambient MAX 3.5 100 UNIT 'CM/ 'CM/
- ^ ; PIN 1. ajllTTER 2. COLLECTOR i 3. BASE ! 2 2 TO-126 package *-*-*> I,-F -1 i A r i *•" * I : H - r D-» —r*, Si 111 G r 1 • • 2 3 DIM A B C D F G H J K R V ° t .- :T A -V 1 4 — J mm MSN MAX 10.70 10.90 7.70 7-90 2.60 2.80 0.66 0.36 3.10 3.30 4.48 4.68 2.00 2.20 1.35 1.55 16.10 16.30 3.70 3.90 0.40 0.60 1.17 1.37 Ft . ~l ' I r~J *-R NJ Soini-t'iiiiductors reserves the right to change test conditions, parameter limits and package dimensions without lit press. llo\\\\c\\er, M Senii-Coiuhictors assniiies no re.spon-.ihilil\\r an> errors or omissions discovered in ils n-v.
Silicon NPN Power Transistor BD725
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VBE(OP) ICBO ICEO IEBO hpE-1 hFE-2 fi PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 30mA ; !B= 0 lc= 2A; IB= 0.2A lc= 2A; VCE= 4V VCB=120V;IE=0 VCB=60V;le=0;Tc=150°C VCE= 60V; IB= 0 VEB= 5V; lc= 0 lc= 0.5A; VCE= 4V lc= 2A; VCE= 4V lc= 0.5A; VCE= 4V MIN 120 TYR MAX 1.0 1.4 0.1 0.2 UNIT V V V wA mA mA mA MHz Switching Times ton toff Turn-On time Turn-Off time i~ i A- i~ i n 1 AA/ — 9n\\ 0.3 1.5 u s u s