BD724

BD724 NJSEMI | Alldatasheet

Document overview

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Technical content

Jbzmi-Conductoi iProducti., One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD724

DESCRIPTION

• DC Current Gain- :hFE=40@lc=-0.5A
• Collector-Emitter Breakdown Voltage - :V(BR)CEo=-100V(Min)
• Complement to type BD723

APPLICATIONS

• Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic I CM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE -100 -100 150 -65-150 UNIT V V V A A A W r THERMAL CHARACTERISTICS SYMBOL P>th j-c P»th j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 3.5 100 UNIT 'CM/ 'CM/
• ^ PIN 1, EMITTER 2, COLLECTOR , ' 3. BASE 1 2 2 TO-126 package ^-B-U..-F i A r H - r — » n i ft G r 1 *. 2 3 DIM A B C D F H J K R U : o
• -*•) T " A i ± i K ""*" t mm WIN 10,70 7.70 2.60 0.66 3.10 4.48 2.90 1.35 16.10 3.70 0.40 1.17 MAX 10.90 7.90 2.90 0.56 3-30 4.63 2.30 1.55 16,30 3,90 0.60 1.37 Cf*- r*-J *-R N.I Scini-l.'iitidtictors reserves the right to change test conditions, parameter limits anil package ilinicn.sions \\\\iihoul niiiicc. Information ftirnisheil by N.I Scmi-CoiHluctors is believed to he hoih neciirate and reliable at the time iit'i.'.oiiu lo pro-is. I Inuever. N I Scini-Condiiclors assunios no responsihililv lor an> errors or omis.Nioiis discovered in its use. \\ Scini •( I'livliu'ini", eiiaiiiranc-* cu-.lniners In \\.-ri|'v ihal dakbheeK are emri.'iil bel'mv placing ordeis.

Silicon PNP Power Transistor BD724

ELECTRICAL CHARACTERISTICS

Tc~25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VBE(on) ICBO ICEO IEBO hpE-1 hFE-2 fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc=-30mA;le=0 lc= -2A; IB= -0.2A lc= -2 A; VCE= -4V VCH=-100V; IE= 0 VCB=-50V;lE=0;Tc=1506C VCE= -50V; IB= 0 VEB= -5V; lc= 0 lc= -0.5A; VCE= -4V lc= -2A; VCE= -4V lc=-0.5A;VCE=-4V MIN -100 TYP. MAX -1.0 -1.4 -50 -0.1 -0.2 UNIT V V V nA mA mA mA MHz Switching Times ton toff Turn-On time Turn-Off time |C=-1A;IB1=-IB2=-0.1A; Vcc= -20V 0.1 0.4 u s u s