BD723 NJSEMI | Alldatasheet
Document overview
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Technical content
^£.mi-(Iondu.ctoi ZPioaucti, Ona.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD723
DESCRIPTION
- DC Current Gain- : hFE= 40@ lc= 0.5A
- Collector-Emitter Breakdown Voltage - : V(BR)CEo= 100V(Min)
- Complement to type BD724
APPLICATIONS
- Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO Veeo Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE 100 100 150 -65-150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance.Junction to Ambient MAX 3.5 100 UNIT -c/w 'C/W
- ^ PIN 1. BETTER 2. COLLECTOR _ 1 3. BASE i 2 3 TO-1 26 package r { ! H T ' D-* —•i i~<>" G f - f" " f i • • 2 3 DIM A B C D F G H K R U ; o IT J — »-j< t A ! ' K ~~* mm MiN 10,70 770 2.60 0.66 3,10 4.43 3.00 1.35 1MO 3.70 0.40 1,17 MAX 10,90 7,90 0.36 3,30 2,20 145 16.30 3.ao 0.60 147 m, . f f t *-J *-R vj N.I Sciiii-C'Dikliicttirs reserves the right to change tost comlitions. p;ir;uneter limits and packiige dimensions \\\\ithout iiDiiee. Infbnuntion liirnjshed liy NJ Scnii-CoiKluctors is helie\\i;il lo he hoih accurate anil reliable at Ilie time nCwiin in press. ||(iue\\er. M Seini-CoiKliielors assumes no respoiisihilil) lor an> errors or omissions discovered in ils n-.e. \\ Si-mi -I iMidnelois encniiray.e1' cii'.liimcr-< lo \\oril> that datasheet-, are ciiiU'iil hel'niv plaeiiiL: ordeis.
Silicon NPN Power Transistor BD723
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VeE(on) ICBO Iceo IEBO hpE-1 hFE-2 fr PARAMETER Collector-Emitter Breakdown Voltage ••• Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS lc= 30mA; IB= 0 lc= 2A; IB= 0.2A lc= 2A; VCE= 4V VOB= 100V; IE=0 VCB=50V; IE=0;TC=150'C VCE= 50V; IB= 0 VEB= 5V; lc= 0 lc= 0.5A; VCE= 4V lc= 2A; VCE= 4V lc= 0.5A; VCE= 4V* MIN 100 TYP. MAX 1.0 1.4 0.1 0.2 UNIT V V V uA mA mA mA MHz Switching Times ton toff Turn-On time Turn-Off time 0.3 1.5 u s 11 S