BD722 NJSEMI | Alldatasheet
Document overview
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Technical content
, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD722
DESCRIPTION
- DC Current Gain- : hFE= 40@ lc= -0.5A
- Collector-Emitter Breakdown Voltage - : V(BR)CEo= -SOV(Min)
- Complement to type BD721
APPLICATIONS
- Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IGM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -80 -80 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance.Junction to Case Thermal Resistance.Junction to Ambient MAX 3.5 100 UNIT 'C/W
- c/w
- ^ PIN LBudTTER 2. COLLECTOR . ! 3. BASE 1 2 ; TO-12S package K-B--T ^f i A r I H - T D-* ~- » n f *fi G r r < i •>•
- » • _«_•. 3 3 DIM A B C D F G H J K R V o T
- — D — *j T " A i K mm MIN 10.70 7.70 2.SO 0.66 1.10 4.48 2.00 1.35 16.10 3J« 0.40 1.17 MAX 10.90 7.90 2,3(1 0.86 3.30 4.63 2.20 1.65 16,30 3.90 0.60 1.37 k~J «-R iv, N.I Soiiii-t'diuliictors reserves the right to change test conditions. p;ir;imeter limits ;iml pucknge iliiucnsions \\\\ilhout iiniKV. liiforniiitioii f'uniislial hy Nl Sciiii-C.'oiuluctors is helic\\cd to he both ;iecnr;\\te iinil ruliiiblc MI (he limo ot'i'.oin \\ Si-Hi i -I 1'inliu-liii-- eiii.'iiiii-M'ie-i i,[i--l<inK-|-s In peril's thill ^luta>lKvti :uv V.IMH-II! lx-|n|.,- phiciim orileis.
Silicon PNP Power Transistor BD722
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VeE(on) ICBO ICEO IEBO hpE-1 hpE-2 fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -30mA ; le= 0 lc= -2A; IB= -0.2A lc= -2A; VCE= -4V VOB= -80V; IE= 0 VCB=-40V; IE=0;TC=150'C VCE= -40V; IB= 0 VEB= -5V; lc= 0 lc= -0.5A; VCE= -4V lc= -2A; VCE= -4V lc=-0.5A;VCE=-4V MIN -80 TYP. MAX -1.0 -1.4 -50 -0.1 -0.2 UNIT V V V uA mA mA mA MHz Switching Times *on toff Turn-On time Turn-Off time lc=-1A;lBi=-lB2=-0.1A; VCG= -20V 0.1 0.4 u s M S