BD721 NJSEMI | Alldatasheet
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Technical content
J^EinL-donduckoi Lptoduati, One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD721
DESCRIPTION
- DC Current Gain- : hFE= 40@ lc= 0.5A
- Collector-Emitter Breakdown Voltage - : V(BR,CEO= SOV(Min)
- Complement to type BD722
APPLICATIONS
- Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 3.5 100 UNIT
- c/w "C/W
- .-<; ' PIN 1. EMITTER 2. COLLECTOR i 3. BASE 1 2 3 TO-1 26 package T>* p I j H - r D-* n G » I i i * i 2 : DIM A B C D * p G H J K R V ; Q TT V D t A I I K ~" mm MIN 10.70 7.70 2.60 0.6G 3.10 4.43 2.00 1.35 16.10 3.70 0.40 1.17 MAX 10.90 7.90 2.80 0.86 3.30 4.68 2.20 1.55 18.30 3,90 0.60 1.37 ^ — ™, i NJ Soini-t'iiiKluctors reserves the right to chiiiige tost conditions, puraniotcr limits and pnck;ige Jinicnsions uithout milky Information furnislial liy N.I Soini-(.'ondiiclors is hclicval to ho hinh iiccnrnro iind reliable a( I lie lime of win;, in pr<>v llo'.sexer. Nl Senii-Coiulnelors assumes no respoiiMbilil) lor an> errors or omissions discovered in its use. Ounlih/ S
Silicon NPN Power Transistor BD721
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VsE(on) ICBO ICEO IEBO hpE-1 hFE-2 fi PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 30mA; IB= 0 lc= 2A; IB= 0.2 A lc= 2A; VCE= 4V VCB= 80V; IE= 0 VCB=40V;lE=0;Tc=150°C VCE= 40V; IB= 0 VEB= 5V; lc= 0 lc= 0.5A; VCE= 4V lc= 2A; VCE= 4V lc= 0.5A; VCE= 4V MIN TYP. MAX 1.0 1.4 0.1 0.2 UNIT V V V uA mA mA mA MHz Switching Times 'on toff Turn-On time Turn-Off time 0.3 1.5 v s V S