BD720 NJSEMI | Alldatasheet
Document overview
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Technical content
^s.m.i-don<m.ckoi ^Ptoduati, (Jna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD720
DESCRIPTION
- DC Current Gain- : hFE= 40@ lc= -0.5A
- Collector-Emitter Breakdown Voltage - : V(BR)CEo= -60V(Min)
- Complement to type BD719
APPLICATIONS
- Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE -60 -60 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c R(h j-a PARAMETER Thermal Resistance.Junction to Case Thermal Resistance.Junction to Ambient MAX 3.5 100 UNIT
- c/w 'CM/
- -1 PIN 1. BETTER 2. COLLECTOR 3. BASE 1 2 ? TO-1 26 package TV* r H - T ' D-» G f G " i * i * • i • • 2 3 DIM A B C D F G H J K R V ; o i't * — D -<-| T ' A K ~* mm WIN 10.70 7.70 2,60 O.S6 3.10 4,48 2,00 1.3S 16.10 3.70 0.40 1.17 MAX 10,90 7.90 2,30 0.3d 3.30 4.&S 2.20 1.SS 16.30 3.90 0.60 1.37 i** .^ r*-J *-R N,l Semi-OmiliiLtors reserves the right to change test eoiulitions. p;iramelcr limits mul p:ick;ige Jiniensions \\\\ithout noiiee. liirbniKition ftirnisheil by Nl Semi-Coiuluelors is hclioxed In he holh iiceumte imJ reliable ;i( llio liiue nt'i.'.nin;.
Silicon PNP Power Transistor BD720
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VBE(on) ICBO ICEO IEBO hFE-1 hFE-2 fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS |c= -30mA ; IB= 0 lc= -2A; IB= -0.2A lc= -2A; VCE= -4V VCB= -60V; IE= 0 VCB=-30V; IE=0;TC=150'C VCE= -30V; IB= 0 VEB= -5V; lc= 0 lc= -0.5A; VCE= -4V lc= -2A; VCE= -4V lc= -0.5A; VCE= -4V MIN -60 TYP. MAX -1.0 -1.4 -50 -0.1 -0.2 UNIT V V V wA mA mA mA MHz Switching Times ton W Turn-On time Turn-Off time lc=-1A;lBi=-lB2=-0.1A; Vcc= -20V 0.1 0.4 y s u s