BD719 NJSEMI | Alldatasheet
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Technical content
tSzml-Conducko'i Lpioducti, One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD719
DESCRIPTION
- DC Current Gain- : hFE= 40@ lc= 0.5A
- Collector-Emitter Breakdown Voltage - : V(BR)CEo= 60V(Min)
- Complement to type BD720
APPLICATIONS
- Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO Veso Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 3.5 100 UNIT °c/w 'CM/ B --cj PIN 1. BETTER i. COLLECTOR ! 3. BASE ! 2 3 TO-126 package r i H - r D-* G HI G >• i-ii.i.^m.— ». 2 3 DIM A B C D F G H J K O R V A f : f A • r v ' K ~* r , ,
- — mm MiN MAX 10.70 10.90 7.70 7.90 2.60 2-30 0.66 0.36 3.10 3.30 4.48 4,68 2.00 2.20 1.35 1.S5 16.10 16JJO 3.70 3.90 0.40 0.60 1.17 1.37 C!^ J vl N.I Sonii-t'oiulnctors IVSLTVCS the right to change tost oimlitions. p;iramotcr limits ;uul pucknge ilinicnsions without N- I '•» mi -I iMi'.hu'Uii s C i ici i ura lie-, eir.tinners lo verily thai Jata-.heeli aiv euiu'iil Ivl'mv I'lacinii orilers. Ounlihy S
Silicon NPN Power Transistor BD719
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VsE(on) ICBO ICEO IEBO hpE-1 h|=E-2 fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS .lc=30mA;lB=0 lc= 2A; IB= 0.2A lc= 2A; VCE= 4V VCB= 60V; IE= 0 VCB=30V;lE=0;Tc=150"C VCE= 30V; IB= 0 VEB= 5V; lc= 0 lc= 0.5A; VCE= 4V lc= 2A; VCE= 4V lc= 0.5A; VCE= 4V MIN TYP. MAX 1.0 1.4 0.1 0.2 UNIT V V V uA mA mA mA MHz Switching Times ton toff Turn-On time Turn-Off time i — -i A. i _ I _ n -1 h-\\/__— om/ 0.3 1.5 n s u s