BD651 NJSEMI | Alldatasheet
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Technical content
^zmi-doncmctoi LPioducti, One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Darlington Power Transistor BD651
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)
- High DC Current Gain : hFE= 750(Min) @lc= 3A
- Low Saturation Voltage
- Complement to Type BD652
APPLICATIONS
- Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICP IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25"C Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE 140 120 0.3 62.5 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL R(h j-c Rth j-a PARAMETER Thermal Resistance.Junction to Case Thermal Resistance.Junction to Ambient MAX 62.5 UNIT °c/w °c/w ST : PIN ; . » ! 2 1- -( 2 / i r -iW — L-W 1 — ' RI m 1.BASE ^.COLLECTOR 3.BJITTER TO-220C package T MQ F « B M J -• V H x~F ±ery 10.00'-
1 H^-:
K 1 1 j tT" or *H* rj ]¥* G [*• i J DIM A B C D F G H J K L Q R S u tf 50*" - *|f mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 — -ISC*' s N(* J ify Semi-Conductors
Silicon NPN Darlington Power Transistor BD651
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat)-1 VcE(sat)-2 VeE(sat) VeE(on) ICBO ICEO IEBO hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS lc= 30mA; IB= 0 lc= 3A; IB= 12mA lc= 5A; le= 50mA lc= 5A; \\= 50mA lc=3A; VCE=3V VCB=120V;IE=0 VCB=70V;lE=0;Tc=150-C VCE= 60V; IB= 0 VEB= 5V; lc= 0 lc=3A;VCE=3V MIN 120 750 TYP, MAX 2.0 2.5 3.0 2.5 0.2 2.0 0.5 UNIT V V V V V mA mA mA