BD650 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
J Cx , (J n.a. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistor BD650
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR,cEo=-100V(Min)
- High DC Current Gain : hFE= 750(Min) @lc= -3A
- Low Saturation Voltage
- Complement to Type BD649
APPLICATIONS
- Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICP IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25=C Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -120 -100 -12 -0.3 62.5 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance.Junction to Case Thermal Resistance, Junction to Ambient MAX 62.5 UNIT °c/w
- c/w 1 '1 PI w fy -1- -•3 N 1 . BAS E 2. COLLECTOR 3. EMITTER TO-220C package i ., 1 * 0 C A 1 f - T H i' " K f f 8 1 H ^ v H|,-F -0^ O.WV r H G f- J i DIM A B C D F G H J K L Q R S U V mm MfN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 ^ •* J
Silicon PNP Darlington Power Transistor BD650
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat)-1 VcE(sat)-2 VeE(sat) VBE(OH) ICBO ICEO IEBO hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS lc= -30mA; le= 0 lc=-3A;lB=-12mA lc= -5A; IB= -50mA lc= -5A; IB= -50mA lc=-3A; VCE=-3V VCB=-100V;IE=0 VCB=-60V; IE=0;TC=150'C VCE= -50V; IB= 0 VES= -5V; |c= 0 |C=-3A;VCE=-3V MIN -100 750 TYP. MAX -2.0 -2.5 -3.0 -2.5 -0.2 -2.0 -0.5 UNIT V V V V V mA mA mA