BD643 SIEMENS | Alldatasheet
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-25C D MM@ 8235605 0004387 7 MMSIEG - NPN Silicon Darlington Transistors 7-33-29 BD 643 L Ls BD 645 1 SIEMENS AKTIENGESELLSCHAF © 94387 =O BD 647 ' BD 649 { Epibase power darlington transistors (62.5W) } BD 643, BD 646, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington : transistors with diode and resistors in a TO 220 AB plastic package (TOP-66). The collectors of the two transistors are electrically connected to the metallic mounting area. These darlington transistors for AF applications are outstanding for particularly high current : gain. Together with BD 644, BD 646, BD 648, and BD 650, they are particularly suitable for use as complementary AF push-pull output stages. . pore 4 4 Type Ordering code ny © go 1 ‘ BD 643 62702-D229 Hl S ! _ S$ BD 643/BD 644 | 062702-D235 tf H . BD 645 Q62702-D231 [ie 7 BD 645/BD 646 | 062702-D236 . BD 647 Q62702-0233 L ace Sensing mark BD 647/BD 648 | 062702-D237 a ee ee qT BD 649 062702-D374 a == CHE Se BD 649/BD 650 | Q62702-D376 tee Insulating nipple | Q62901-B65 sf 2 : Mica washer 062901-B62 : i Spring washer 2 A3 DIN 137 062902-B63 a = ‘ E) CChange in dimensional drawings in preparation. se ah Approx. weight 18 9.Dimensions in mm Maximum ratings BD 643| BD 645| BD 647| BD G49 Collector-emitter voltage Veco | 45 60° 80 100 |v ° Collector-base voltage Vezo | 45 60 80 100 |v . Base-emitter voltage Veso | 5 5 5 5 v Collector current Io 8 8 8 8 A Collector-peak current (t < 10 ms) Ion | 12 12 12 12 A Base current ly 160 |160 |160 1150 |ma Storage temperature range Tstg -55 to+150 ie} ° Junction temperature Ti 160 | 150 |150 |150 |°c Total power dissipation (Tease S 25°C, Vee S 10 V) Po | 625 | 625 |625 | 625 |W Thermal resistance Junction to ambient air Rena | $80 | 80 | $80 | $80 K/wW Junction to case"? Rinse | $2 $2 $2 $2 KW 1) For insulated mounting: if the mica washer Q82901-B 52 (50 to 90 um) and the insulating nipple Q62901-B 65 are used this value increases by 4 K/W and with grease by 2 K/W. . 433 1810 c-13
25C D MM 8235605 0004388 9 MMSIEG . T-33-29 a 25C 04388 OD BD 643 BD 645 BD 649 Static characteristics (Tmp = 25°C) : BD 643 | BD 646 | BD 647 | BD 649 Collector cutoff current . (Vee = Voamex) Teso <02 |<02 |<02 |<02 |ma (Vep = Veamaxi Tamb = 100°C) eno <2 <2 «<2 <2 mA Collector cutoff current (Vee = 0.5 Voemex) Teco <05 |<05 |<05 |<05 |mA Emitter cutoff current (Veg = 5 V) Teso <5 <5 <5 <5 mA : Collector-emitter breakdown . voltage (/c = 100 mA)" Viariceo | >45 >60 <80 |>100 |v : Collector-base breakdown voltage (Ie = 6 mA) Veryceo |>45 |>60 |>80 |>100 |v Emitter-base breakdown voltage (Je = 2 mA) Vieryeso | >8 >5 >5 >5 v DC current gain Ug = 0.6 A, Veg = 3.V) hee 1600 |1500 |1500 |1600 |- Ug = 6 A, Vog = 3 V) Dre 760 750 750 750 - Base-emitter forward voltage Collector-emitter saturation voltage” (Ig = 3A, Ig = 12 mA) Veesar | <2 <2 <2 <2 v Forward voltage of the protective diode at Ip = 3A Ve 1.8 18 18 1.8 Vv : Dynamic characteristics (Tam = 25°C) . Transition frequency * Uc = 3A, Vog = 3.V, f= 1 MHz) fr 7(>1) | 71) | 71) | 71) [MHz Cutoff frequency in common emitter configuration : Uc = 3A; Veg = 3V) fhte 60 60 60 60 kHz : i 1) t= 200 us, duty cycle 1%. 434 1811 c-14
25C D MM 8235605 0004389 O MMSIEG. 1 1-33-29 25 04389 D “BD 643 BD 645 : SIEMENS AKTIENGESELLSCHAF nn +514 : Total perm powers saation Permissible pulse load ; Prot = f (Tease) Vee = parameter k fue = #0: v= parameter . Ww BD 643, 8D 645, 80647, BD 649 Ww 80 643, BD 645, B80 647, BD 649 % + eee : A wren TUT | A EET Pee ata AM : o AN o ATA Ty i N Mi crt ij — (oe ‘(ee HELEN ee » CETTE @ CCCs a 50 ‘0 ‘0c woo ot ot ot a t's ° a , NW mn a a SUTIN OTST EFFI o mati come A CT ERNRent E ee oie @ AUT Tt iw ry 10° v, wv 10! 10 w ke oma a = + Lanz 0-01 ; : 435 4 ~~" . :
. 25C D MM 8235605 0004390 7 MBSIEG —— T-33-29 _ 25C 04390 “Bp 643 BD 645 BD 649 Collector current Ic = f (Vag) Collector-omitter saturation voltage: . Vog = 3V: Tease = 25°C Veesat = f (lc); fee = 260; Tease = 26°C ak eed So ees, BOeA7, aDese nk" apes, Boas, BOSe7, BDeaD : == = : . SSeS ——— i ee eS Se c es es ‘ | we fweleerr | : a a ey 2 a a a 7 A i an a vot Att ee se A a a we eet ttt === —— === : ae ol | i oo or a a a | es a | wlP WT tT Ty wl Ti tT tT : 0 1 2 WW 0 1 2 av | ee — Vee sat : 436 . . a 1813 D-02 : .