BD645

BD644 SIEMENS | Alldatasheet

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_ 2@5C D Ml@ 8235605 0004391 9 MESIEG | T-33-31 . PNP Silicon Darlington Transistors BD 644 : D BD 646 SIEMENS AKTIENGESELLSCHAF 391 i?) BD 648 . BD 650 . Epibase power darlington transistors (62.5W) : BD 644, BD 646, BD 648, and BD 650 are monolithic PNP silicon epibase power darlington : transistors with diode and resistors in a TO 220 AB plastic package (TOP-66). The collectors ‘of the two transistors are electrically connected to the metallic mounting area. These 7 darlington transistors for AF applications are outstanding for particularly high current gain. Together with BD 643, BD 645, BD 647, and BD 649, they are particularly suitable for use as complementary AF push-pull output stages. ~ ponn-n- tener Type Ordering code " ' : BD 644 062702-D230 ' ' : BD 644/BD 643 paired | 62702-0236 ! ! BD 646 62702-0232 ARBRE BD 646/BD 645 paired | 062702-D236 ace sensing mark . BD 648 062702-D234 ae BD 648/BD 647 paired | 062702-D237 SS ste = ; BD 650 62702-0375 ———— ; Oe 1 BD 650/BD 649 paired | 062702-D376 tes Lead : Insulating nipple 062901-B55 ma 2 1 Mica washer 062901-B52 : | Spring washer iz a i A3 DIN 137 062902-863 $ 3 : Dimensional drawings in preparation. 15 as Approx. weight 18g. Dimensions inmm $ Maximum ratings BD 644| BD 646| BD 648| BD 650 : Collector-emitter voltage -Veeo | 45 60 80 too |v Collector-base voltage ~Vego | 45 60 80 100 |v . Base-emitter voltage ~Vego | 5 5 5 5 v Collector current -Ie | 8 8 8 8 A Collector peak current (t < 10 ms) om | 12 12 12 12 A Base current -f, | 180 1150 |150 1150 |ma Storage temperature range Tatg 56 to +150 °c Junction temperature Tj 150 | 150 |150 |150 [°c Total power dissipation (Tease S 25°C, -Veg S 10 V) Por | 625 | 625 | 625 | 625 |W Thermal resistance - : Junction to ambient air Rena | <80 | $80 | 80 | $80 | Kw Junction to case" Rinse | $2 $2 $2 $2 KW 1) For insulated mounting: If the mica washer Q62901-8 52 (50 to 90 um) and the insulating nipple Q62901-B 55 are used this value increases by 4 K/W, and with grease by 2 K/W. . : ome 437 {1814 0-03 :

• 25¢ D m@ 8235605 0004392 O MMSIEG~ T-33-31 - 25C 04392 O BD 644 . SIEMENS AKTIENGESELLSCHAF — BD bet BD 650 Static characteristics (Tamb = 25°C) , BD 644 | BD 646 | BD 648 | BD 650 Collector cutoff current (Veg = Voamaxi Tamb = 100°C) —Icgo <2 <2 <2 <2 mA Collector cutoff current (Vee = 0.5 Veemax) -keeo |<05 |<05 |<05 |<05 [mA Emitter cutoff current (Veg = 5 V) leo | <8 <6 <6 <6 mA : Collector-emitter breakdown ° voltage (Ic = 100 mA)? -Verycco| >45 |>60 |>80 |>100 |v ; Collector-base breakdown voltage (le = 5 mA) -Vanycaol >45 |>60 |>80 |>100 |v . Emitter-base breakdown voltage (/_ = 2 mA) -Vearyeao| > >8 >5 >B v DC current gain : (“Ic = 0.8 A; -Vce = 3V) hee 1500 |1500 | 1500 |1500 |- Base-emitter forward voltage q Collecor-emitter saturation : voltage” : (-Ig = 3.A; ~Ig = 12 mA) “Veesat_ | <2 <2 <2 <2 v Forward voltage of the protective diode at fp = 3A Ve 18 18 18 18 v Dynamic characteristics (Tam = 25°C) Transition frequency . (-1¢=3A;-Vce=3V,f=1MHz) fr 701) |701 [71 | 71) | Me Cutoff frequency in common emitter configuration (“Ig = 3A; -Vee = 3 V) the 60 60 60 60 kHz . 1) t= 200 us, duty cycle 1% . . 438 1815 D-04 :

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25C D Mm 8235605 0004394 4 mmSIEG, ' 1-33-31 — ; L690 04594 13) "BD 644 . NGESELLSCHAF : BD 646 : BD 650 . Collector current Ic = f (Vag) Collector-emitter saturation voltage “Vee = 3V; Tease = 25°C Veesat =f ch: hee = 260; Teage = 25°C nA BD 64s, Beds, BDGIs, BDE50 mA 80644, Bede, BDa0, BDeso ———— = we FP 4 ee oe or oe i ea fw beet a oe oe oe no . oa heetfA ft |; a A a thee eel = = a a A . wll TTT TT} e@L TIT Py | : o 1 2 aw 0 1 2 av + ee —— ee sat : 440 > 1817 0-06