BD644 NJSEMI | Alldatasheet
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Technical content
^E.mi-Conducto'i t-Pioduati, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistor BD644
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= -45V(Min)
- High DC Current Gain : hFE= 750(Min) @lc= -3A
- Low Saturation Voltage
- Complement to Type BD643
APPLICATIONS
- Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25-C) SYMBOL VCBO VCEO VEBO Ic ICP IB PC Tj Tslg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25°C Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -60 -45 -12 -0.3 62.5 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance, Junction to Ambient MAX 62.5 UNIT 'C/W
- c/w IP I < •_ \\ 2: 3 PI li- ~VvV ' * ' /»'.' - ^n; N 1.6ASE ^.COLLECTOR 3.BWIITTER TO-220C package
- »i .¥* A J » - B - -« V «•] ^CrlJ W.OO"- * H ' , « ~—\\ T f c -H * rr oh J DIW A B C D F G H J K L Q R S u V ,--F soS • L D
- ••-* mm M!N 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 — poo
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Silicon PNP Darlington Power Transistor BD644
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL VoEO(SUS) VcE(satH VcE(sat)-2 VeE(sat) VeE(on) ICBO ICEO IEBO hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS lc= -30mA; IB= 0 lc=-3A; lB=-12mA lc= -5A; IB= -50mA lc= -5A; IB= -50mA lc= -3A ; VCE= -3V VCB= -45V; IE= 0 VCB=-30V; lE=0;Tc=150'C VCE= -25V; IB= 0 VEB= -5V; lc= 0 lc= -3A ; VCE= -3V MIN -45 750 TYP. MAX -2.0 -2.5 -3.0 -2.5 -0.2 -2.0 -0.5 UNIT V V V V V mA mA mA