BD637 NJSEMI | Alldatasheet
Document overview
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Technical content
^/£ii£U ^e.mi-Conducto'i ^Product*., One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD637
DESCRIPTION
- DC Current Gain - ;. : hFE = 40(Min.)@ lc= 25mA
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.)
- Complement to Type BD638
APPLICATIONS
- Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25t:) SYMBOL VCBO VCEO VEBO Ic IOM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @T -25°c Collector Power Dissipation' @ TC-25'C Junction Temperature Storage Temperature Range VALUE 100 0.3 150 -55-150 UNIT V V V A A A W (P i ' i PIN l.BASE 1 i 2. COLLECTOR , : i 3. WITTER i 2 3 TO-220C package A T J_ - B H -» -« V H L-F M.DO'- i K T H r »4*« D j^r G h- * i j OIM A B C D F G H K L U R S U U 50&- • mm MIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.70 1.31 6.65 8.86 f f N.I SciiihCniiductors reserves the right to change tost conditions, parameter limits and package dimensions \\vithout notice. Inrbimatit'ii tiirni.shed hy N.I Soini-(.'oiuluctors is helie\\cd to he hinh accurate and reliable at the lime of iioin XI Scmi-('4Midiiclors encoiiraues tuslomcrs to \\erily dial datasheets are cunvnl before placing orders.
Silicon NPN Power Transistor BD637
ELECTRICAL CHARACTERISTICS
Tc-25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VBE(on) ICES hpE-1 hpE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc= 30mA; IB= 0 lc=0.1mA;lE=0 IE= 1mA; lc= 0 IC=1A;IB=0.1A lc= 1A; VCE= 2V VCE=100V;VBE=0 lc= 25mA; VCE= 2V lo=1A;VCE=2V MIN 100 MAX 0.6 1.3 0.2 UNIT V V V V V mA