BD636 NJSEMI | Alldatasheet
Document overview
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Technical content
J \\-/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD636
DESCRIPTION
- DC Current Gain - :, : hFE = 40(Min.)@lc=-25mA
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= -60V(Min.)
- Complement to Type BD635
APPLICATIONS
- Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25'C Collector Power Dissipation • @ TG=25r Junction Temperature Storage Temperature Range VALUE -60 -60 -0.3 150 -55-150 UNIT V V V A A A W La^HM K I^^^B 1 — L PIN 1. BASE , | ' 2. COLLECTOR , : 3. EMITTER < 2 :-. TO-220C package U i i • A f 1
- * B H *. ^ v *\\\\, --F ^0"'!] laoov K H c i r , i DIN A B C D F G H J K L Q R S U U i
- ••* mm MIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 1500 N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\\\ithout iHiiiei:. Intonnation liirni.shoil hy N.I St-mi-Conduclors is helic\\cd to he hoih accurate and reliahle at the time of uoii in press, llnwevei'. N.I Senii-(.'oiKliiciors assumes no responsibility lor JHIJ errors or oinissi4>iis discovered in its use. N I Scini-( 'I'lidudors ciicuiira.ues customers to verily dial Jalitslieei% aiv i.iiirriil before placing orders.
Silicon PNP Power Transistor BD636
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VBE(on) ICES hpE-1 hpE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc= -30mA; IB= 0 lc=-0.1mA;lE=0 lE=-1mA; lc=0 IC=-1A;IB=-0.1A lc=-1A;VCE=-2V VCE= -60V; VBE= 0 lc= -25mA; VCE= -2V lc=-1A;VCE=-2V MIN -60 -60 MAX -0.6 -1.3 -0.2 UNIT V V V V V mA