BD635 NJSEMI | Alldatasheet
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Technical content
JbE.ml-Conducto'i iPioducti, One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD635
DESCRIPTION
- DC Current Gain - . : hFE = 40(Min.)@ lc= 25mA
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= 60V(Min.)
- Complement to Type BD636
APPLICATIONS
- Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation T -25"C Collector Power Dissipation @ Tc-25'C Junction Temperature Storage Temperature Range VALUE 0.3 150 -55-150 UNIT V V V A A A W . ,«.,., 2 ' ' PIN 1.BA8E I 1 2. COLLECTOR ' i | 3. EMITTER 1 2 2 TO-220C package U \\ T L 1 H T K t j cP i - B -» V > y^G> -«LOC'- .Ji.. DM A B C D F G H J K L R S U V -»^L - 0 mm MtM 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 L.tV 2.50 1.29 6.45 8.66 UAV 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.70 1.31 6.65 8.86 —15 Oft- * 1"*" J N.I SiMiii-Cimiluctors reserves the right lo change tost coiulitions. parumoler limits niiil pnekage dimensions \\vithoiit nniiee. liir'oiniiitiiMi liirnishal hy N.I Senii-t'oikluetors is hclie\\cil lo he hoih iiceurtite inul reliable ;it tho lime ol'j.Miin in pros-;. I lowever, N.I Seiiii-C'niulndors iissnmos no rcsponsihililv Ibr ;in> errors or omissions Jiseovereil in its H-M.V XI Sc'iiii-( iMuliicliiis entniiniiies (.'ii^lnnii'i's to M-'rily lh:il J;il:isliccls iiivennvnt be lure p hie ing onlers.
Silicon NPN Power Transistor BD635
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VBE(on) ICES hpE-1 hpE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc= 30mA; |B= 0 lc= 0.1mA; IE= 0 lE=1mA;lc=0 lc= 1A; IB= 0.1A lc=1A;VCE=2V VCE= 60V; VBE= 0 lc= 25mA; VCE= 2V lc= 1A;VCE=2V MIN MAX 0.6 1.3 0.2 UNIT V V V V V mA