BD633 NJSEMI | Alldatasheet
Document overview
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Technical content
^Products., O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD633
DESCRIPTION
- DC Current Gain - :- : hFE = 40(Min.)@lc=25mA
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= 45V(Min.)
- Complement to Type BD634
APPLICATIONS
- Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta~25°C Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE 0.3 150 -55-150 UNIT V V V A A A W ^^ ] ' • PIN 1.BA3E
- : 2. COLLECTOR
3 EMITTER
! 2 3 TO-220C package U I A*"' J f * H K T C i -« B -H - V H L -' rt-cfE! .-• H < ut: i "^.w t U ~ U.. DIM A B C D F ti H K L R S U V 500' ' mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 .70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 "> OA 2.70 1.31 6.65 8.86 p fc r* J N.I Senii-CDiidiictors reserves the right to change tost conditions, parameter limits and package dimension* uilhout luiiicc. Inforniatioii furnished hy N.I Sonii-(.'oiuluctors is helie\\ed to he hoili iiccunite and reliable ;i( the lime i<> pros^. llnuever, N,l Sciiii-C'otidiicfors assumes no responsibility for an> errors or oniis.sioiis Jiscoveivd in its u N.I Semi-Ci'iKliielors einjuiiranes CINOIIKTS to verily thai Jalasheel-; are amvnt Ivliire placing: orilers.
Silicon NPN Power Transistor BD633
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VaEfon) ICES hFE-1 l>E-2 PARAMETER Collector-Emitter Breakdown Voltage :_ Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc= 30mA; IB= 0 lc=0.1mA;lE=0 lE=1mA; lc=0 IC=1A;IB=0.1A lc= 1A; VCE= 2V VCE= 45V; VBE= 0 lc= 25mA; VCE= 2V lc=1A;V0E=2V MIN MAX 0.6 1.3 0.2 UNIT V V V V V mA