BD618

BD612 SIEMENS | Alldatasheet

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25C D MM 8235605 0004383 T MESIEG 1 PNP Silicon Epibase Transistors : T-3777 BDG12 BD 614 SIEMENS AKTIENGESELLSCHAF 04383 P) BD 616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 620 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically connected to the metallic mounting area. The transistors are particularly suitable for use in push-pull output stages, driver stages as well as for general AF applications. Their complementary types are the NPN transistors BD 611, BD 613, BD 615, BD 617, and BD 619. Type Ordering code Type Ordering code BD 612 062702-0947 BD 612/BD 611 pair. | 062702-D1103 BD 614 062702-D949 BD 614/BD 613 pair. | 062702-D1104 BD 616 062702-D951 BD 616/BD 616 pair. | 062702-D1105 BD 618 62702-0953 BD 618/BD 617 pair. | 062702-D1106 BD 620 062702-D965 BD 620/BD 619 pair. | 062702-D1107 eee ty! : 33 f=—e]-aiy . tr aa a i a8 2 Z2m2 & ! = 2 13,220 0) 4, 5 9 85 3202 85201 38 | Available upon request also with bent Bae tree fixing plate. Approx. weight 15 g Dimensions in mm 7 Maximum ratings BD 612] BD 614| BD 616] BD 6181 BD 621 Collector-emitter voltage Vee [22 [32 [4s feo) [so sv Collector-emitter voltage Vee 22. '|32-««|45-s 60s |go |v Collector-base voltage ~Veso {22 {32 «|45 |60 |s0 |v : Emitter-base voltage ~Veso | 5 5 5 5 5 v Collector current Ie [4 4 4 4 4 A Collector peak current (t< 11 ms) ley |7 7 7 7 7 A Emitter peak current (ts 10 ms) lem |7 7 7 7 7 A Base current -Ip 1 i 1 1 1 A Junction temperature T |180 |150 |180 150 180 {sc Storage temperature range Tstg 55 to +150 °c Total power dissipation | (Teese $ 25°C; Vee S12V) Pre [15 [15/15 lt lis w Thermal resistance : Junction to ambient air Rina | 5625 | $625 | 5625 | 562,5 | $625 | Kw Junction to mounting area Aye 1583 1583 1383 |s83 |s8,3 |K/W a + 429 1806 c-09 a A @ ~

| 25C D MM 4235605 0004384 1 MMSIEG 7-33-/7 \\ 25C 04384 °°0 BD 612 : BD 614 ‘ SIEMENS AKTIENGESELLSCHAF a ~ BD 616 * BD 618 BD 620 Static characteristics (Tease = 25°C) . BD 612 | BD 614| BD 616 | BD 618 | BD 620) Collector-emitter breakdown Collector-emitter breakdown - Collector-base breakdown Emitter-base breakdown voltage (le = 1 mA) -Vierseso| >5 >6 >6 >5 >5 v Collector cutoff current (-Vop = 22) Igo | <t00 | - - - - HA Collector cutoff current (-Vog = 32 V) ~Ieeo | - <100 |- - - yA Collector cutoff current Collector cutoff current Collector cutoff current (-Vea = 80 V) -Ieno | - - - - <100 | pA Collector cutoff current (-Veg = 10 V; Tamb = 150°C) —Iegq | <1 <1 <1 <1 <1 mA Collector cutoff current (-Vee=Veamax:Tamb=150°C)-Icgo (| <3 <3 <3 <3 <3 mA Base-emitter forward voltage (-lg=2A;-Vee=1V) — —Vae <t1o [<i |<12 [<15 [<5 |v Base-emitter forward voltage . (“Ig = 3A; -Vee = 1V) Vee - - <13 <1.6 <16 Vv Collector-emitter saturation . voltage (~Ie = 2A)? “Voesat- | <0.8 | <08 | - - - Vv Collector-emitter saturation voltage Collector-emitter saturation - voltage (=I =3A;-lg=0.3A) — —Voesat | — - <0.7 |<09 |<o9 |v DC current gain 1) For the characteristic which passes through the point Ig = 2.2 Aand Vcg = 1V at constant base current. 2) Available as matching pairs with BO 611, BD 613, BD 615, BD 617, and BD 619. Condition for matching pairs OFEW/MFE2 S 1.41, . 430 1807 c-1lo.... e@

• 25C D mE 8235605 O00438S 3 MMSIEG ' 7 33_/7 25C 04385 “poe12 | « BD614 BD6is BD 620 : Dynamic characteristics (Tosse = 25°C) Hi BD 612 | BD 614 | BD 616 | BD 618 | BD 620) i Transition frequency : (“le = 0.25 A; Vee = 1V: : Cutoff frequency in common emitter : configuration 4

1808 Colt 431

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