BD508DW NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BU508DW
DESCRIPTION
- High Voltage-VCEs= 1500V(Min.)
- Collector Current- lc = 8.0A
- Built-in Integrated Diode
APPLICATIONS
- Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCES VCEO VEBO lc ICM IB IBM PC Tj Tslg PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature VALUE 1500 700 8.0 125 150 -65-150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER MAX Thermal Resistance.Junction to Case 1 .0 UNIT
- c/w -', • 3 PIN 1.BASE 2. COLLECTOR * *j 1 3.0/1ITTER "123 TO-247 package I \\' • 1» i : r ' ; ; 1 • ! ; i '*: :i t : : i F-!:t!:~ R . •• • ' ' i i • 1 , i !V I i j : . i i L r mm DIM WIN MAX A 19.80 20.20 B 15.40 15.80 C 4.90 5.10 D 0.90 1.10 E 1.40 1.60 F 1.90 2.10 G 10.80 11.00 H 2.40 2.60 J 0.50 0.70 K 19.50 20.50 P 3.90 4.10 Q 3.30 3.50 U 5.20 5.40 V 2.90 3.10 Quality Semi-Conductors
Silicon NPN Power Transistor BU508DW
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeE(sat) ICES IEBO hFE fT VECF PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product C-E Diode Forward Voltage CONDITIONS lc= 100mA; IB= 0 ;lc=4.5A; IB=1.6A |c= 4.5A; IB= 2A VCE= 1500V; VBE= 0 VCE= 1500V; VBe= 0; Tc= 125'C VES= 5.0V; lc= 0 lc= 0.1A; VCE= 5V lc= 0.1 A; VCE= 5V IF= 4.5A MIN 700 TYP. MAX 1.0 1.1 1.0 2.0 300 2.0 UNIT V V V mA mA MHz V Switching Times( 16kHz line deflection circuit) ts tf Storage Time Fall Time lcsat= 4.5A;LC= 1mH;Cfb= 4nF lB(end) = 1.4A; LB= 6 u.H; -VBB=-4V 6.5 0.7 |j s u s