BD433 NJSEMI | Alldatasheet
Document overview
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Technical content
£s.m.l-(Lon(hjickoi 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistors TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 378-8960 BD433/435/437
DESCRIPTION
- With TO-126 package
- Complement to type BD434/436/438
APPLICATIONS
- For medium power linear and switching applications PINNING PIN
Collector;connected to mounting base Base ECB Fig.1 simplified outline (TO-126) and symbol Absolute maximum ratings (Ta=25q SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tstg PARAMETER Collector-base voltage Collector-emitter voltage BD433 BD435 BD437 BD433 BD435 BD437 Emitter -base voltage Collector current (DC) Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector Tc=25l_ VALUE 150 -65-150 UNIT V V V A A A W L NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time or"going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Power Transistors BD433/435/437 CHARACTERISTICS Tj=25D unless otherwise specified SYMBOL Vcesat VBE VcEO(SUS) ICES ICES IEBO hpE-1 hFE-2 hpE-3 ft PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector-emitter sustaining voltage Collector cut-off current Collector cut-off current BD433/435 BD437 BD433/435 BD437 BD433 BD435 BD437 BD433 BD435 BD437 BD433 BD435 BD437 Emitter cut-off current DC current gain BD433/435 BD437 DC current gain DC current gain BD433/435 BD437 Transition frequency CONDITIONS lc=2A; IB=0.2A U-OA • \\/,r— 1V lc=0.1A; IB=0 VCB=22V; IE=0 VcB=32V; IE=0 VCB=45V; IE=0 Vce=22V; VBE=O VCE=32V; VBE=0 VcE=45V; VBE=O VEB=5V; IG=0 1^.— mm A • \\A~c- R\\ lc=0.5A;VCE=1V lc=2A;VCE=1V lc=250mA;VcE=1V MIN TYP. 0.2 MAX 0.5 0.6 1.1 1.2 100 100 130 140 UNIT V V V [JA MA mA MHz 8.5MAX 2.8MAX 0.75±oi 1 2 3