BD430 SIEMENS | Alldatasheet
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25C D MM 4235605 0004359 2 MESIEG .. : PNP Silicon Planar Transistor * BD 430 ' SIEMENS AKTIENGESELLSCHAF BD 430 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 202. ; Together with its complementary transistor BD 429 it is particularly suitable for use in i complementary output stages of medium performance (e.g. car radios). i i i . H Type Ordering code i BD 430 | 062702-01070 a = | List . =) % i Plas i ina ri i FE { . 22s 3 t 4 aw 1 : 3 : j g5e0s 38 i 13,2201 >] 65809 Ad 13,281 17202 . ’ Available upon request also with Approx. weight 16 g. Dimensions in mm | bantfixing plato. : i Maximum ratings 3 Collector-emitter voltage ~Vees 32 v : Collector-emitter voltage -Voeo 20 v ‘ Emitter-base voltage -Veso 5 v : Collector current -Ic 3 A Emitter current -e 3 A : Base current -lp 1 A - Junction temperature yj 150 °c Storage temperature range Teg -65to+150 | °C Total power dissipation (Tease = 25°C) Prot 10 w . (Tam = 26°C) Prot 2 w Thermal resistance Junction to ambient air Ringa | $62,5 | Kw . Junction to mounting area Rinse $125 Kw 1762 A-13 _., 405
25C D mm 8235605 OOO43EO 9 MESIEG 72 33/77 . 25¢ 04360 _ 0 BD 430 i Static characteristics (Tam = 25°C) i Collector-emitter saturation voltage : (“Ic = 2A; ~Ig = 200 mA) “Vets | $0.5 v i Collector cutoff current . (-Vep = 32 V) -Ieso 510, | A : Collector cutoff current (-Vog = 32 V; T; = 150°C) -Ieeo <1 mA Emitter cutoff current . (-Veg = 5 V) ~keeo 10 HA Base-emitter voltage i (Veg = 10 V; ~Ie = 5 mA) Vat 0.6 v (Veg = 1V; -Ic = 2A) -Vae 51.2 v . DC current gain Veg = 10V; Ig = 5 mA hee >60 - “Vee =1V; ie =0.5A hee 85to375 | - “Veg = 1V;Ig=2A hee >40 - . Dynamic characteristics (Tam = 25°C) ‘ \\ Transition frequency : (-Vog = 8 V; ~le = 50 mA) fr | 100 | Miz ; 406 =, 2783 An-14 .
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