BD429 SIEMENS | Alldatasheet

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25C D MM 4235605 OOO43SS § MBSIEG ‘4-33-05 i NPN Silicon Planar Transistor BD 429 j SIEMENS AKTIENGESELLSCHAF ic 04355 =0———_ i BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. i Together with its complementary transistor BD 430 it is particularly suitable for use in complementary output stages of medium performance (e.g. car radios). 1 i Type Ordering code ——— i 4 ie : Type —_ tering co & =| ¢ : BD 429 | 062702-01069 zoe = (64 |< #8 - 8s i 4 ° 222 Ry i Ss a y i 2 ase 38 13.2001] aseos 4.45 328 27202 Available upon request also with Approx. weight 15g. Dimensions in mm . bent fixing plate. Maximum ratings i Collector-emitter voltage Vees 32 Vv : Collector-emitter voltage Voeo 20 v Emitter-base voltage Veso 6 v Collector current Ic 3 A Emitter current 4 3 A : Base current Ig 1 A Junction temperature ui 150 °C - Storage temperature range Teta -55 to +150 °C Total power dissipation (Tease = 25°C) Prot 10 w > (Tomb = 25°C) Prot 2 w - Thermal resistance Junction to ambient air Rina | $62,5 | Kw 4 Junction to mounting area Rinse $125 KW . 401 “1778 A~09 .

_ 25C D MM 8235605 OOO435b 7 MESIEG T-33-05 _ 25C 04356 D ‘BD 429 ; SIEMENS AKTIENGESELLSCHAF ——H-W—————_- : Static characteristics (Tamp = 25°C) : Collector-emitter saturation voltage ; (Ic = 2A; Ig = 200 mA) Veesat 50.6 v Collector cutoff current ° (Veg = 32) Toao $10 HA Collector cutoff current (ea = 32 V; Tj = 150°C) Teso <1 mA Emitter cutoff current (Veg = 6 V) Tego 510 LA : Base-emitter voltage + (og = 10V; Ig = 5 mA) Vag 0.6 v : (ee = 1V; Ie = 2A) Vee $1.2 v : DC current gain Vee = 10 V; Ie = 5 mA hee >60 - Vee = 1V; Io = 0.5 hee 8510375 | - Veg =1V:Io=2A bee >40 - . Dynamic characteristics (Temp = 26°C) : Transition frequency . (Veg = 8 V; Io = 50 mA) fr | 130 | MHz : 402 1779 A-10

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