BD314 NJSEMI | Alldatasheet
Document overview
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Technical content
, O na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD314
DESCRIPTION
- Excellent Safe Operating Area
- DC Current Gain-hFE= 25(Min.)@lc = -4A
- Collector-Emitter Saturation Voltage- :VCE(sat)=-1.0V(Max)@lc = -5A'
- Complement to Type BD313
APPLICATIONS
- Designed for high quality amplifiers operating up to 60 watts into 4 ohm load. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation@Tc=25°C Junction Temperature Storage Temperature VALUE -80 -80 -10 -20 115 200 -65-200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.52 UNIT °c/w ^ ' J* ^^^ | PIN 1.BASE Y 2. EMITTER K^ 3. COLLECT OR (CASE) ' TO-3 package IE v-. M t I— N-*1 ' > -JU-D j *— U _* p-L- /2T\\ ?XTs ^* $—2-— 4 ™ ^ j /TV .
- PH C i PL / \\ C i nun DIM MIM MAX A 3900 B 25.30 C 7.80 D 090 E 1.40 2667 8.30 1.10 1.60 6 1 0.92 H S.46 _fi» "-W L 1675 N 1«.40 Q 4.00 U 3000 V 4,30 13. SO 170S 19.62 4,20 3020 450 t-K t B \\I Soini-C'iiiidnttors reserves the right to change tost coiulitions. parameter limits and package Jinicn.sions without iHiiiee. Information furnished by N.I Scini-Coiiiluctors is helicNcil to he hoih nceurate mul roliahlc ai the lime ol'i'.oiii'- Ut pres>;. llo\\\\e\\er. N,l Seiiii-CoiKludors assumes no rosponsihilily lor an> errors or omissions iliseovereil in its use. XI Scmi-( iMuliKlnis eiicuiiraiies cuslomers In \\erily thai JalaslieeK aivciinvnl helinv
Silicon PNP Power Transistor BD314
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(sat) VeEfon) ICBO IEBO hpE-1 hFE-2 fr PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current Gain-Bandwidth Product CONDITIONS lc= -200mA; IB=0 IC=-5A;IB=-0.5A |C=-5A;IB=-0.5A |c= -4A; VCE= -4V VCB= -80V; IB= 0 VEB= -7.0V; lc= 0 |c= -4A; VOE= -4V lc=-10A;VCE=-4V lc= -0.5A; VCE= -10V;f=1.0MHz MIN -80 MAX -1.0 -1.8 -1.5 -1.0 -1.0 UNIT V V V V mA mA MHz