BD312 NJSEMI | Alldatasheet
Document overview
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Technical content
, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD312
DESCRIPTION
- Excellent Safe Operating Area
- DC Current Gain-hFE= 25(Min.)@lc = -5A
- Collector-Emitter Saturation Voltage- :VCE(sat)=-1.0V(Max)@lc = -5A ''
- Complement to Type BD311
APPLICATIONS
- Designed for high quality amplifiers operating up to 60 watts into 4 ohm load. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation@TG=25°C Junction Temperature Storage Temperature VALUE -60 -60 -10 -20 115 200 -65-200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 1.52 UNIT
- c/w I PIN 1.BASE Y 2. BETTER KL 3. COLLECT OR (CASE) ' TO-3 package M ' ' -JU-D . - — u — * /cL^\\^ \\^^/f = c PL r / ^ ^ c I1HI1 DIM MIN MAX A 3900 B 25.30 C 7.80 D 030 E 1 40 26.67 S.30 1.10 1,60 G 10.92 H 5,46 K 11.40 L 1675 N 1940 ft 4.00 U 3000 V 4.30 13.SO 1705 19,62 420 3020 4,50 t , B t \\'.l Scnii-C'iUKluctors reserves the right lo ehjiiijie tost minditions. parameter limits and. package dimensions uithout nniicc. InKonnation funiisheil by N.I Scnii-CiMuluetors is helie\\ed lo he hoih aceurate niul reliable ;it the lime nfgoin In pies-;. I louexer. N,l Seini-CdiKliictors assunios no responsihiliiy lor an> errors or omissions discovered in its use. N.I Semi-( oiuluelDi's eiictiiirajie^ c'liMonicrs lo verily thai JiitasheeK are ciirivnl helnre plaeinj; orders.
Silicon PNP Power Transistor BD312
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeE(sat) VBE(on) ICBO IEBO hpE-1 hpE-2 Is/b fr PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Second Breakdown Collector Current with Base Forward Biased Current Gain-Bandwidth Product CONDITIONS lc= -200mA; IB=0 lc= -5A; IB= -0.5A lc= -5A; IB= -0.5A lc= -5A; VCE= -4V VCB= -60V; IB= 0 VEB= -7.0V; lc= 0 lc= -5A; VCE= -4V lc= -1 OA; VCE= -4V VCE= -39V,t= 0.5s VCE= -50V,t= 0.5s lc= -0.5A; VCE= -10V;f=1.0MHz MIN -60 -2.95 -0.60 MAX -1.0 -1.8 -1.5 -1.0 -1.0 UNIT V V V V mA mA A MHz