BD311 NJSEMI | Alldatasheet
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Technical content
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD311
DESCRIPTION
- Excellent Safe Operating Area
- DC Current Gain-hFE= 25(Min.)@lc = 5A
- Collector-Emitter Saturation Voltage- :VCE(sat)=1.0V(Max)@lc = 5A
- Complement to Type BD312
APPLICATIONS
- Designed for high quality amplifiers operating into 4 ohm load. ABSOLUTE MAXIMUM RATINGS(Ta=25 C ) SYMBOL VCBO VCEO VEBO Ic I CM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation@Tc=25°C Junction Temperature Storage Temperature up to 60 watts VALUE 115 200 -65-200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 1.52 UNIT °c/w PIN 1.BASE J.BirtlTTER 3.COLLECTOR(CASE) TO-3 package r i I IE * A- 1 i — 1U-D, X!N *! k 4 f$\\ ^s PL / \\ c DIM MIH MAX A 3900 B 2530 C 7.80 D 0.90 E t.40 366? 8.30 1 10 1.60 Q 1092 H 646 K 1 1 ,40 L 1675 H 1940 Q 400 U 3000 V 430 13SO 1705 19.62 420 3020 4SO SB t B I NJ Sciiii-CHiiiluctois reserves the right lo change test conditions, parameter limits and package dimensions uilhout iHiiiee. liUbnnatinn tiirnished hy N.I Scnii-Coiuluctors is helie\\ed to he hoih accurate and reliable ;il the time ol'poiim N I Suni-( undiiciors ciictMir:i»es customers in \\i-ri!'y that datasheets are ciirivn! he lore placing order's
Silicon NPN Power Transistor BD311
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(sat) VBE(on> ICBO IEBO hpE-1 hFE-2 Is/b fr PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Second Breakdown Collector Current with Base Forward Biased Current Gain-Bandwidth Product CONDITIONS lc=200mA ; IB=0 lc= 5A; IB= 0.5A lc= 5A; IB= 0.5A lc= 5A; VCE= 4V VCB= 60V; IB=0 VEB= 7.0V; lc=0 lc= 5A; VCE= 4V lc= 10A;VCE=4V VCE= 39V, t= 0.5s VCE= 50V,t= 0.5s lc= 0.5A; VCE= 10V;f=1.0MHz MIN 2.95 0.60 MAX 1.0 1.8 1.5 1.0 1.0 UNIT V V V V mA mA A MHz