BD202F NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
, {I nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor BD202F/204F
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR,CEO = -45V(Min)- BD202F -60V(Min)- BD204F
- Complement to Type BD201F/203F
APPLICATIONS
- Designed for use in hi-fi equipment delivering of 15 to 15 W into a 4Q or 8 Q load. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic I CM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage BD202F BD204F BD202F BD204F Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipatic n Junction Temperature Storage Temperature Range an output VALUE -60 -60 -45 -60 -12 150 -65-150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case UNIT V V V A A A W MAX 6.3 UNIT 'CM/ ^H 1 ~ ? 3 -<; 1.BASE 2. COLLECTOR 3.MITTER TO-220Fa package f i ij; i 1 1 H t -•< 3 — DIM A p C D F G J K L N Q R s y V mm WIN 16.85 9.90 4.35 0.75 3.20 fi.90 SIS 0.45 13.35 1.10 4.98 4.3S 2.95 270 1.75 1.30 MAX 17.15 10.10 4.65 0.80 3.40 7.10 545 0.75 13.65 1.30 5.13 S.15 3.25 2.90 2.05 1.50 rf i N.I Semi-Coiitliictors reserves the right to change tost conditions, parameter limits and package dimensions \\vitruuit iHHico. Inrormation rumishcd hy N.I Soini-C'onductors is believed to he holh accurate and reliable M the time ofgoii lo press. llm\\e\\er, N.I Seiiii-Condiictors assumes no responsibility Cor an\\s or omissions discovered in its ii.se. N.I Scmi-Condiiclors encmira.ues cusloniers to verily thai data-wheels are ciinvnt beloiv placing orders. Qualify Semi-Conducfors
Silicon PNP Power Transistor BD202F/204F
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat)-1 VcE(sat)-2 VBE(sat) VBE(on) ICEO ICBO IEBO hpE-1 hpE-2 fr PARAMETER Collector-Emitter Breakdown Voltage BD202F BD204F Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Em itter Cutoff Current DC Current Gain BD202F BD204F DC Current Gain Current-Gain — Bandwidth Product CONDITIONS |c=-1mA;lE=0 lE=-1mA;lc=0 lc= -3A; IB= -0.3A lc= -6A; IB= -0.6A lc= -6A; IB= -0.6A lc= -3A ; VCE= -2V VCE= -30V; IB= 0 VCB=VCBO;|E=O VCB=1/2VcBo;lE=0;Tj=150'C VEB= -5V; lc=0 lc= -3A ; VCE= -2V lc=-2A; VCE=-2V lc= 11A;VC£=-2V lc= -0.3A; VCE= -3V, f,est= 1.0MHz MIN -45 -60 -60 7.0 MAX -1.0 -1.5 -2.0 -1.5 -0.2 -0.1 -1.0 -0.5 UNIT V V V V V V V mA mA mA MHz Switching Times ton toff TunvOn Time Turn-Off Time 1 — OA- Ir, — Irs — fl OA u s u s